Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

H01L27/01comprising only passive thin-film or thick-film elements formed on a common insulating substrate H01L27/013Thick-film circuits H01L27/016Thin-film circuits H01L27/02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier including integrated passive circuit elements with at least one potential-jump barrier or surface barrier H01L27/0203Particular design considerations for integrated circuits H01L27/0207Geometrical layout of the components H01L27/0211adapted for requirements of temperature H01L27/0214for internal polarisation H01L27/0218of field effect structures H01L27/0222Charge pumping, substrate bias generation structures H01L27/0225Charge injection in static induction transistor logic structures H01L27/0229of bipolar structures H01L27/0233Integrated injection logic structures H01L27/0237using vertical injector structures H01L27/024using field effect injector structures H01L27/0244I2L structures integrated in combination with analog structures H01L27/0248for electrical or thermal protection H01L27/0251for MOS devices H01L27/0255using diodes as protective elements H01L27/0259using bipolar transistors as protective elements H01L27/0262including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor H01L27/0266using field effect transistors as protective elements H01L27/027specially adapted to provide an electrical current path other than the field effect induced current path H01L27/0274involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor H01L27/0277involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor H01L27/0281field effect transistors in a "Darlington-like" configuration H01L27/0285bias arrangements for gate electrode of field effect transistors H01L27/0288using passive elements as protective elements H01L27/0292using a specific configuration of the conducting means connecting the protective devices H01L27/0296involving a specific disposition of the protective devices H01L27/04the substrate being a semiconductor body H01L27/06including a plurality of individual components in a non-repetitive configuration H01L27/0605integrated circuits made of compound material H01L27/0611integrated circuits having a two-dimensional layout of components without a common active region H01L27/0617comprising components of the field-effect type H01L27/0623in combination with bipolar transistors H01L27/0629in combination with diodes, or resistors, or capacitors H01L27/0635in combination with bipolar transistors and diodes, or resistors, or capacitors H01L27/0641without components of the field effect type H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors H01L27/0664Vertical bipolar transistor in combination with diodes H01L27/067Lateral bipolar transistor in combination with diodes, or capacitors, or resistors H01L27/0676comprising combinations of diodes, or capacitors or resistors H01L27/0682comprising combinations of capacitors and resistors H01L27/0688Integrated circuits having a three-dimensional layout H01L27/0694comprising components formed on opposite sides of a semiconductor substrate H01L27/07the components having an active region in common H01L27/0705comprising components of the field effect type H01L27/0711in combination with bipolar transistors and diodes, or capacitors, or resistors H01L27/0716in combination with vertical bipolar transistors and diodes, or capacitors, or resistors H01L27/0722in combination with lateral bipolar transistors and diodes, or capacitors, or resistors H01L27/0727in combination with diodes, or capacitors or resistors H01L27/0733in combination with capacitors only H01L27/0738in combination with resistors only H01L27/0744without components of the field effect type H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors H01L27/0761Vertical bipolar transistor in combination with diodes only H01L27/0766with Schottky diodes only H01L27/0772Vertical bipolar transistor in combination with resistors only H01L27/0777Vertical bipolar transistor in combination with capacitors only H01L27/0783Lateral bipolar transistors in combination with diodes, or capacitors, or resistors H01L27/0788comprising combinations of diodes or capacitors or resistors H01L27/0794Combinations of capacitors and resistors H01L27/08including only semiconductor components of a single kind H01L27/0802Resistors only H01L27/0805Capacitors only H01L27/0808Varactor diodes H01L27/0811MIS diodes H01L27/0814Diodes only H01L27/0817Thyristors only H01L27/082including bipolar components only H01L27/0821Combination of lateral and vertical transistors only H01L27/0823including vertical bipolar transistors only H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,( H01L27/0826Combination of vertical complementary transistors H01L27/0828Combination of direct and inverse vertical transistors H01L27/085including field-effect components only H01L27/088the components being field-effect transistors with insulated gate H01L27/0883Combination of depletion and enhancement field effect transistors H01L27/0886including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body H01L27/092Complementary MIS field-effect transistors H01L27/0921Means for preventing a bipolar H01L27/0922Combination of complementary transistors having a different structure H01L27/0924including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body H01L27/0925comprising an N-well only in the substrate H01L27/0927comprising a P-well only in the substrate H01L27/0928comprising both N- and P- wells in the substrate H01L27/095the components being Schottky barrier gate field-effect transistors H01L27/098the components being PN junction gate field-effect transistors H01L27/10including a plurality of individual components in a repetitive configuration H01L27/101including resistors or capacitors only H01L27/102including bipolar components H01L27/1021including diodes only H01L27/1022including bipolar transistors H01L27/1023Bipolar dynamic random access memory structures H01L27/1024Arrays of single bipolar transistors only H01L27/1025Static bipolar memory cell structures H01L27/1026Bipolar electrically programmable memory structures H01L27/1027Thyristors H01L27/1028Double base diodes H01L27/105including field-effect components H01L27/1052Memory structures and multistep manufacturing processes therefor not provided for in groups H01L27/1055 - H01L27/112 H01L27/1055comprising charge coupled devices of the so-called bucket brigade type H01L27/1057comprising charge coupled devices [CCD] or charge injection devices [CID] H01L27/108Dynamic random access memory structures H01L27/10802comprising floating-body transistors H01L27/10805with one-transistor one-capacitor memory cells H01L27/10808the storage electrode stacked over transistor H01L27/10811with bit line higher than capacitor H01L27/10814with capacitor higher than bit line level H01L27/10817the storage electrode having multiple wings H01L27/1082the capacitor extending under transfer transistor area H01L27/10823the transistor having a trench structure in the substrate H01L27/10826the transistor being of the FinFET type H01L27/10829the capacitor being in a substrate trench H01L27/10832the capacitor extending under or around transfer transistor area H01L27/10835having storage electrode extension stacked over transistor H01L27/10838the capacitor and the transistor being in one trench H01L27/10841the transistor being vertical H01L27/10844Multistep manufacturing methods H01L27/10847for structures comprising one transistor one-capacitor memory cells H01L27/1085with at least one step of making the capacitor or connections thereto H01L27/10852the capacitor extending over the access transistor H01L27/10855with at least one step of making a connection between transistor and capacitor H01L27/10858the capacitor extending under the access transistor area H01L27/10861the capacitor being in a substrate trench H01L27/10864in combination with a vertical transistor H01L27/10867with at least one step of making a connection between transistor and capacitor H01L27/1087with at least one step of making the trench H01L27/10873with at least one step of making the transistor H01L27/10876the transistor having a trench structure in the substrate H01L27/10879the transistor being of the FinFET type H01L27/10882with at least one step of making a data line H01L27/10885with at least one step of making a bit line H01L27/10888with at least one step of making a bit line contact H01L27/10891with at least one step of making a word line H01L27/10894with simultaneous manufacture of periphery and memory cells H01L27/10897Peripheral structures H01L27/11Static random access memory structures and multistep manufacturing processes therefor H01L27/1104the load element being a MOSFET transistor H01L27/1108the load element being a thin film transistor H01L27/1112the load element being a resistor H01L27/1116Peripheral circuit region H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor H01L27/11206Programmable ROM [PROM] H01L27/11213ROM only H01L27/1122with source and drain on the same level H01L27/11226Source or drain contact programmed H01L27/11233Gate programmed H01L27/1124Gate contact programmed H01L27/11246Gate dielectric programmed H01L27/11253Doping programmed H01L27/1126Entire channel doping programmed H01L27/11266Source or drain doping programmed H01L27/11273with source and drain on different levels H01L27/1128with transistors on different levels H01L27/11286Peripheral circuit regions H01L27/11293of memory structures of the ROM-only type H01L27/115Electrically programmable read-only memories and multistep manufacturing processes therefor H01L27/11502with ferroelectric memory capacitor H01L27/11504Top-view layout H01L27/11507Memory core region H01L27/11509Peripheral circuit region H01L27/11512Boundary region between core and peripheral circuit region H01L27/11514Three-dimensional arrangements H01L27/11517with floating gate H01L27/11519Top-view layout H01L27/11521Memory core region core region H01L27/11524with at least one cell select transistor H01L27/11526Peripheral circuit region H01L27/11529of memory regions comprising at least one cell select transistor H01L27/11531Simultaneous fabrication of periphery and memory cells H01L27/11534including only one type of peripheral transistor H01L27/11536Control gate layer used for the peripheral transistor H01L27/11539Intergate dielectric layer used for the peripheral transistor H01L27/11541Floating-gate layer used for the peripheral transistor H01L27/11543Tunnel dielectric layer used for the peripheral transistor H01L27/11546including different types of peripheral transistors H01L27/11548Boundary region between core and peripheral circuit regions H01L27/11551Three-dimensional arrangements H01L27/11553with source and drain on different levels H01L27/11556the channel comprising at least one vertical portion H01L27/11558the control gate being a doped region H01L27/1156the floating gate being an electrode shared by a plurality of components H01L27/11563with charge trapping gate insulator H01L27/11565Top-view layout H01L27/11568Memory core region H01L27/1157with at least one cell select transistor H01L27/11573Peripheral circuit region H01L27/11575Boundary region between core and peripheral circuit region H01L27/11578Three-dimensional arrangements H01L27/1158with source and drain on different levels H01L27/11582the channel comprising at least one vertical portion H01L27/11585with gate electrode comprising a layer which is used for its ferroelectric memory properties H01L27/11587Top-view layout H01L27/1159Memory core region H01L27/11592Peripheral circuit region H01L27/11595Boundary region between core and peripheral circuit region H01L27/11597Three-dimensional arrangements H01L27/118Masterslice integrated circuits H01L27/11801using bipolar technology H01L27/11803using field effect technology H01L27/11807CMOS gate arrays H01L27/11896using combined field effect/bipolar technology H01L27/11898Input and output buffer/driver structures H01L27/12the substrate being other than a semiconductor body H01L27/1203the substrate comprising an insulating body on a semiconductor body H01L27/1207combined with devices in contact with the semiconductor body H01L27/1211combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body H01L27/1214comprising a plurality of TFTs formed on a non-semiconducting substrate H01L27/1218with a particular composition or structure of the substrate H01L27/1222with a particular composition, shape or crystalline structure of the active layer H01L27/1225with semiconductor materials not belonging to the group IV of the periodic table H01L27/1229with different crystal properties within a device or between different devices H01L27/1233with different thicknesses of the active layer in different devices H01L27/1237with a different composition, shape, layout or thickness of the gate insulator in different devices H01L27/124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement H01L27/1244for preventing breakage, peeling or short circuiting H01L27/1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement H01L27/1251comprising TFTs having a different architecture H01L27/1255integrated with passive devices H01L27/1259Multistep manufacturing methods H01L27/1262with a particular formation, treatment or coating of the substrate H01L27/1266the substrate on which the devices are formed not being the final device substrate H01L27/127with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement H01L27/1274using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor H01L27/1277using a crystallisation promoting species H01L27/1281by using structural features to control crystal growth H01L27/1285using control of the annealing or irradiation parameters H01L27/1288employing particular masking sequences or specially adapted masks H01L27/1292using liquid deposition H01L27/1296adapted to increase the uniformity of device parameters H01L27/13combined with thin-film or thick-film passive components H01L27/14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation H01L27/142Energy conversion devices H01L27/1421comprising bypass diodes integrated or directly associated with the device H01L27/144Devices controlled by radiation H01L27/1443with at least one potential jump or surface barrier H01L27/1446in a repetitive configuration H01L27/146Imager structures H01L27/14601Structural or functional details thereof H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes H01L27/14605Structural or functional details relating to the position of the pixel elements H01L27/14607Geometry of the photosensitive area H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements H01L27/1461characterised by the photosensitive area H01L27/14612involving a transistor H01L27/14614having a special gate structure H01L27/14616characterised by the channel of the transistor H01L27/14618Containers H01L27/1462Coatings H01L27/14621Colour filter arrangements H01L27/14623Optical shielding H01L27/14625Optical elements or arrangements associated with the device H01L27/14627Microlenses H01L27/14629Reflectors H01L27/1463Pixel isolation structures H01L27/14632Wafer-level processed structures H01L27/14634Assemblies H01L27/14636Interconnect structures H01L27/14638Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane H01L27/1464Back illuminated imager structures H01L27/14641Electronic components shared by two or more pixel-elements H01L27/14643Photodiode arrays; MOS imagers H01L27/14645Colour imagers H01L27/14647Multicolour imagers having a stacked pixel-element structure H01L27/14649Infra-red imagers H01L27/1465of the hybrid type H01L27/14652Multispectral infra-red imagers, having a stacked pixel-element structure H01L27/14654Blooming suppression H01L27/14656Overflow drain structures H01L27/14658X-ray, gamma-ray or corpuscular radiation imagers H01L27/14659Direct radiation imagers structures H01L27/14661of the hybrid type H01L27/14663Indirect radiation imagers H01L27/14665Imagers using a photoconductor layer H01L27/14667Colour imagers H01L27/14669Infra-red imagers H01L27/1467of the hybrid type H01L27/14672Blooming suppression H01L27/14674Overflow drain structures H01L27/14676X-ray, gamma-ray or corpuscular radiation imagers H01L27/14678Contact-type imagers H01L27/14679Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers H01L27/14681Bipolar transistor imagers H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof H01L27/14685Process for coatings or optical elements H01L27/14687Wafer level processing H01L27/14689MOS based technologies H01L27/1469Assemblies H01L27/14692Thin film technologies H01L27/14694The active layers comprising only AIIIBV compounds H01L27/14696The active layers comprising only AIIBVI compounds H01L27/14698Post-treatment for the devices H01L27/148Charge coupled imagers H01L27/14806Structural or functional details thereof H01L27/14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes H01L27/14818Optical shielding H01L27/14825Linear CCD imagers H01L27/14831Area CCD imagers H01L27/14837Frame-interline transfer H01L27/14843Interline transfer H01L27/1485Frame transfer H01L27/14856Time-delay and integration H01L27/14862CID imagers H01L27/14868CCD or CID colour imagers H01L27/14875Infra-red CCD or CID imagers H01L27/14881of the hybrid type H01L27/14887Blooming suppression H01L27/14893comprising a photoconductive layer deposited on the CCD structure H01L27/15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission H01L27/153in a repetitive configuration H01L27/156two-dimensional arrays H01L27/16including thermoelectric components with or without a junction of dissimilar materials including thermomagnetic components H01L27/18including components exhibiting superconductivity H01L27/20including piezo-electric components including electrostrictive components including magnetostrictive components H01L27/22including components using galvano-magnetic effects H01L27/222Magnetic non-volatile memory structures H01L27/224comprising two-terminal components H01L27/226comprising multi-terminal components H01L27/228of the field-effect transistor type H01L27/24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier H01L27/2409comprising two-terminal selection components H01L27/2418of the metal-insulator-metal type H01L27/2427of the Ovonic threshold switching type H01L27/2436comprising multi-terminal selection components H01L27/2445of the bipolar type H01L27/2454of the vertical channel field-effect transistor type H01L27/2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate H01L27/2472the switching components having a common active material layer H01L27/2481arranged in a direction perpendicular to the substrate H01L27/249the switching components being connected to a common vertical conductor H01L27/26including bulk negative resistance effect components H01L27/265Gunn effect devices H01L27/28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part H01L27/281Integrated circuits having a three-dimensional layout H01L27/283comprising components of the field-effect type H01L27/285Integrated circuits with a common active layer H01L27/286with an active region comprising an inorganic semiconductor H01L27/288Combination of organic light sensitive components with organic light emitting components H01L27/30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation with components specially adapted for either the conversion of the energy of such radiation into elecrical energy or for the control of electrical energy by such radiation H01L27/301Energy conversion devices H01L27/302comprising multiple junctions H01L27/304in form of a fiber or a tube H01L27/305Devices controlled by radiation H01L27/307Imager structures H01L27/308Devices specially adapted for detecting X-ray radiation H01L27/32with components specially adapted for light emission H01L27/3202OLEDs electrically connected in parallel H01L27/3204OLEDs electrically connected in series H01L27/3206Multi-colour light emission H01L27/3209using stacked OLED H01L27/3211using RGB sub-pixels H01L27/3213using more than three sub-pixels H01L27/3216the areas of RGB sub-pixels being different H01L27/3218characterised by the geometrical arrangement of the RGB sub-pixels H01L27/322using colour filters or colour changing media [CCM] H01L27/3223combined with dummy elements H01L27/3225OLED integrated with another component H01L27/3227the other component being a light sensitive element H01L27/323the other component being a touch screen H01L27/3232the other component being a light modulating element H01L27/3234the other component being an imager structure H01L27/3237Displays not provided for in group H01L27/3241 and subgroups H01L27/3239Light emitting logos H01L27/3241Matrix-type displays H01L27/3244Active matrix displays H01L27/3246Banks H01L27/3248Connection of the pixel electrode to the TFT H01L27/3251Double substrate H01L27/3253Electrical connection of the two substrates H01L27/3255Chiplets H01L27/3258Insulating layers formed between TFT elements and OLED elements H01L27/326special geometry or disposition of pixel-elements H01L27/3262of TFT H01L27/3265of capacitor H01L27/3267Dual display H01L27/3269Including photosensors to control luminance H01L27/3272Shielding H01L27/3274including organic thin film transistors [OTFT] H01L27/3276Wiring lines H01L27/3279comprising structures specially adapted for lowering the resistance H01L27/3281Passive matrix displays H01L27/3283Including banks or shadow masks H01L27/3286Dual display H01L27/3288Wiring lines H01L27/329comprising structures specially adapted for lowering the resistance H01L27/3293Tiled displays H01L27/3295including banks or shadow masks H01L27/3297Wiring lines