Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating

CCHEMISTRY METALLURGY C23Surface treatment C23CCOATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL

C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating

C23C16/003Coating on a liquid substrate C23C16/006characterized by the colour of the layer C23C16/01on temporary substrates C23C16/02Pretreatment of the material to be coated C23C16/0209by heating C23C16/0218in a reactive atmosphere C23C16/0227by cleaning or etching C23C16/0236by etching with a reactive gas C23C16/0245by etching with a plasma C23C16/0254Physical treatment to alter the texture of the surface C23C16/0263Irradiation with laser or particle beam C23C16/0272Deposition of sub-layers C23C16/0281of metallic sub-layers C23C16/029Graded interfaces C23C16/04Coating on selected surface areas C23C16/042using masks C23C16/045Coating cavities or hollow spaces C23C16/047using irradiation by energy or particles C23C16/06characterised by the deposition of metallic material C23C16/08from metal halides C23C16/10Deposition of chromium only C23C16/12Deposition of aluminium only C23C16/14Deposition of only one other metal element C23C16/16from metal carbonyl compounds C23C16/18from metallo-organic compounds C23C16/20Deposition of aluminium only C23C16/22characterised by the deposition of inorganic material, other than metallic material C23C16/24Deposition of silicon only C23C16/26Deposition of carbon only C23C16/27Diamond only C23C16/271using hot filaments C23C16/272using DC, AC or RF discharges C23C16/274using microwave discharges C23C16/275using combustion torches C23C16/276using plasma jets C23C16/277using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets C23C16/278doping or introduction of a secondary phase in the diamond C23C16/279control of diamond crystallography C23C16/28Deposition of only one other non-metal element C23C16/30Deposition of compounds, mixtures or solid solutions C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi C23C16/303Nitrides C23C16/305Sulfides, selenides, or tellurides C23C16/306AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te C23C16/308Oxynitrides C23C16/32Carbides C23C16/325Silicon carbide C23C16/34Nitrides C23C16/342Boron nitride C23C16/345Silicon nitride C23C16/347Carbon nitride C23C16/36Carbonitrides C23C16/38Borides C23C16/40Oxides C23C16/401containing silicon C23C16/402Silicon dioxide C23C16/403of aluminium, magnesium or beryllium C23C16/404of alkaline earth metals C23C16/405of refractory metals or yttrium C23C16/406of iron group metals C23C16/407of zinc, germanium, cadmium, indium, tin, thallium or bismuth C23C16/408of copper or solid solutions thereof C23C16/409of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide C23C16/42Silicides C23C16/44characterised by the method of coating C23C16/4401Means for minimising impurities C23C16/4402Reduction of impurities in the source gas C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases C23C16/4407Cleaning of reactor or reactor parts by using wet or mechanical methods C23C16/4408by purging residual gases from the reaction chamber or gas lines C23C16/4409characterised by sealing means C23C16/4411Cooling of the reaction chamber walls C23C16/4412Details relating to the exhausts C23C16/4414Electrochemical vapour deposition [EVD] C23C16/4415Acoustic wave CVD C23C16/4417Methods specially adapted for coating powder C23C16/4418Methods for making free-standing articles C23C16/442using fluidised bed process C23C16/448characterised by the method used for generating reactive gas streams C23C16/4481by evaporation using carrier gas in contact with the source material C23C16/4482by bubbling of carrier gas through liquid source material C23C16/4483using a porous body C23C16/4485by evaporation without using carrier gas in contact with the source material C23C16/4486by producing an aerosol and subsequent evaporation of the droplets or particles C23C16/4487by using a condenser C23C16/4488by in situ generation of reactive gas by chemical or electrochemical reaction C23C16/452by activating reactive gas streams before their introduction into the reaction chamber C23C16/453passing the reaction gases through burners or torches C23C16/455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber C23C16/45502Flow conditions in reaction chamber C23C16/45504Laminar flow C23C16/45506Turbulent flow C23C16/45508Radial flow C23C16/4551Jet streams C23C16/45512Premixing before introduction in the reaction chamber C23C16/45514Mixing in close vicinity to the substrate C23C16/45517Confinement of gases to vicinity of substrate C23C16/45519Inert gas curtains C23C16/45521the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery C23C16/45523Pulsed gas flow or change of composition over time C23C16/45525Atomic layer deposition [ALD] C23C16/45527characterized by the ALD cycle C23C16/45529specially adapted for making a layer stack of alternating different compositions or gradient compositions C23C16/45531specially adapted for making ternary or higher compositions C23C16/45534Use of auxiliary reactants other than used for contributing to the composition of the main film C23C16/45536Use of plasma, radiation or electromagnetic fields C23C16/45538Plasma being used continuously during the ALD cycle C23C16/4554Plasma being used non-continuously in between ALD reactions C23C16/45542Plasma being used non-continuously during the ALD reactions C23C16/45544characterized by the apparatus C23C16/45546specially adapted for a substrate stack in the ALD reactor C23C16/45548having arrangements for gas injection at different locations of the reactor for each ALD half-reaction C23C16/45551for relative movement of the substrate and the gas injectors or half-reaction reactor compartments C23C16/45553characterized by the use of precursors specially adapted for ALD C23C16/45555applied in non-semiconductor technology C23C16/45557Pulsed pressure or control pressure C23C16/45559Diffusion of reactive gas to substrate C23C16/45561Gas plumbing upstream of the reaction chamber C23C16/45563Gas nozzles C23C16/45565Shower nozzles C23C16/45568Porous nozzles C23C16/4557Heated nozzles C23C16/45572Cooled nozzles C23C16/45574Nozzles for more than one gas C23C16/45576Coaxial inlets for each gas C23C16/45578Elongated nozzles, tubes with holes C23C16/4558Perforated rings C23C16/45582Expansion of gas before it reaches the substrate C23C16/45585Compression of gas before it reaches the substrate C23C16/45587Mechanical means for changing the gas flow C23C16/45589Movable means C23C16/45591Fixed means C23C16/45593Recirculation of reactive gases C23C16/45595Atmospheric CVD gas inlets with no enclosed reaction chamber C23C16/45597Reactive back side gas C23C16/458characterised by the method used for supporting substrates in the reaction chamber C23C16/4581characterised by material of construction or surface finish of the means for supporting the substrate C23C16/4582Rigid and flat substrates C23C16/4583the substrate being supported substantially horizontally C23C16/4584the substrate being rotated C23C16/4585Devices at or outside the perimeter of the substrate support C23C16/4586Elements in the interior of the support C23C16/4587the substrate being supported substantially vertically C23C16/4588the substrate being rotated C23C16/46characterised by the method used for heating the substrate C23C16/463Cooling of the substrate C23C16/466using thermal contact gas C23C16/48by irradiation C23C16/481by radiant heating of the substrate C23C16/482using incoherent light, UV to IR C23C16/483using coherent light, UV to IR C23C16/484using X-ray radiation C23C16/485using synchrotron radiation C23C16/486using ion beam radiation C23C16/487using electron radiation C23C16/488Protection of windows for introduction of radiation into the coating chamber C23C16/50using electric discharges C23C16/503using dc or ac discharges C23C16/505using radio frequency discharges C23C16/507using external electrodes C23C16/509using internal electrodes C23C16/5093Coaxial electrodes C23C16/5096Flat-bed apparatus C23C16/511using microwave discharges C23C16/513using plasma jets C23C16/515using pulsed discharges C23C16/517using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515 C23C16/52Controlling or regulating the coating process C23C16/54Apparatus specially adapted for continuous coating C23C16/545for coating elongated substrates C23C16/56After-treatment