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Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
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H01L29/00
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ELECTRICITY
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Electric elements
H01L
SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
Current Industry
H01L29/00
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
Sub Industries
H01L29/02
Semiconductor bodies; Multistep manufacturing processes therefor
H01L29/04
characterised by their crystalline structure
H01L29/045
by their particular orientation of crystalline planes
H01L29/06
characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/0603
characterised by particular constructional design considerations
H01L29/0607
for preventing surface leakage or controlling electric field concentration
H01L29/0611
for increasing or controlling the breakdown voltage of reverse biased devices
H01L29/0615
by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions
H01L29/0619
with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region
H01L29/0623
Buried supplementary region
H01L29/0626
with a localised breakdown region
H01L29/063
Reduced surface field [RESURF] pn-junction structures
H01L29/0634
Multiple reduced surface field (multi-RESURF) structures
H01L29/0638
for preventing surface leakage due to surface inversion layer
H01L29/0642
Isolation within the component
H01L29/0646
PN junctions
H01L29/0649
Dielectric regions
H01L29/0653
adjoining the input or output region of a field-effect device
H01L29/0657
characterised by the shape of the body
H01L29/0661
specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
H01L29/0665
the shape of the body defining a nanostructure
H01L29/0669
Nanowires or nanotubes
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oriented parallel to a substrate
H01L29/0676
oriented perpendicular or at an angle to a substrate
H01L29/068
comprising a junction
H01L29/0684
characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
H01L29/0688
characterised by the particular shape of a junction between semiconductor regions
H01L29/0692
Surface layout
H01L29/0696
of cellular field-effect devices
H01L29/08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/0804
Emitter regions of bipolar transistors
H01L29/0808
of lateral transistors
H01L29/0813
Non-interconnected multi-emitter structures
H01L29/0817
of heterojunction bipolar transistors
H01L29/0821
Collector regions of bipolar transistors
H01L29/0826
Pedestal collectors
H01L29/083
Anode or cathode regions of thyristors or gated bipolar-mode devices
H01L29/0834
Anode regions of thyristors or gated bipolar-mode devices
H01L29/0839
Cathode regions of thyristors
H01L29/0843
Source or drain regions of field-effect devices
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of field-effect transistors with insulated gate
H01L29/0852
of DMOS transistors
H01L29/0856
Source regions
H01L29/086
Impurity concentration or distribution
H01L29/0865
Disposition
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Shape
H01L29/0873
Drain regions
H01L29/0878
Impurity concentration or distribution
H01L29/0882
Disposition
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Shape
H01L29/0891
of field-effect transistors with Schottky gate
H01L29/0895
Tunnel injectors
H01L29/10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/1004
Base region of bipolar transistors
H01L29/1008
of lateral transistors
H01L29/1012
Base regions of thyristors
H01L29/1016
Anode base regions of thyristors
H01L29/102
Cathode base regions of thyristors
H01L29/1025
Channel region of field-effect devices
H01L29/1029
of field-effect transistors
H01L29/1033
with insulated gate
H01L29/1037
and non-planar channel
H01L29/1041
with a non-uniform doping structure in the channel region surface
H01L29/1045
the doping structure being parallel to the channel length
H01L29/105
with vertical doping variation
H01L29/1054
with a variation of the composition
H01L29/1058
with PN junction gate
H01L29/1062
of charge coupled devices
H01L29/1066
Gate region of field-effect devices with PN junction gate
H01L29/107
Substrate region of field-effect devices
H01L29/1075
of field-effect transistors
H01L29/1079
with insulated gate
H01L29/1083
with an inactive supplementary region
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characterised by the contact structure of the substrate region
H01L29/1091
of charge coupled devices
H01L29/1095
Body region
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characterised by the materials of which they are formed
H01L29/122
Single quantum well structures
H01L29/125
Quantum wire structures
H01L29/127
Quantum box structures
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Structures with periodic or quasi periodic potential variation
H01L29/151
Compositional structures
H01L29/152
with quantum effects only in vertical direction
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comprising at least one long range structurally disordered material
H01L29/155
Comprising only semiconductor materials
H01L29/157
Doping structures
H01L29/158
Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction
H01L29/16
including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form
H01L29/1602
Diamond
H01L29/1604
Amorphous materials
H01L29/1606
Graphene
H01L29/1608
Silicon carbide
H01L29/161
including two or more of the elements provided for in group H01L29/16
H01L29/165
in different semiconductor regions
H01L29/167
further characterised by the doping material
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Selenium or tellurium only, apart from doping materials or other impurities
H01L29/185
Amorphous materials
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including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/2003
Nitride compounds
H01L29/2006
Amorphous materials
H01L29/201
including two or more compounds
H01L29/205
in different semiconductor regions
H01L29/207
further characterised by the doping material
H01L29/22
including, apart from doping materials or other impurities, only AIIBVI compounds
H01L29/2203
Cd X compounds being one element of the 6th group of the Periodic System
H01L29/2206
Amorphous materials
H01L29/221
including two or more compounds
H01L29/225
in different semiconductor regions
H01L29/227
further characterised by the doping material
H01L29/24
including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L29/242
AIBVI or AIBVII compounds
H01L29/245
Pb compounds
H01L29/247
Amorphous materials
H01L29/26
including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24
H01L29/263
Amorphous materials
H01L29/267
in different semiconductor regions
H01L29/30
characterised by physical imperfections having polished or roughened surface
H01L29/32
the imperfections being within the semiconductor body
H01L29/34
the imperfections being on the surface
H01L29/36
characterised by the concentration or distribution of impurities in the bulk material
H01L29/365
Planar doping
H01L29/40
Electrodes; Multistep manufacturing processes therefor
H01L29/401
Multistep manufacturing processes
H01L29/402
Field plates
H01L29/404
Multiple field plate structures
H01L29/405
Resistive arrangements
H01L29/407
Recessed field plates
H01L29/408
with an insulating layer with a particular dielectric or electrostatic property
H01L29/41
characterised by their shape, relative sizes or dispositions
H01L29/413
Nanosized electrodes
H01L29/417
carrying the current to be rectified, amplified or switched
H01L29/41708
Emitter or collector electrodes for bipolar transistors
H01L29/41716
Cathode or anode electrodes for thyristors
H01L29/41725
Source or drain electrodes for field effect devices
H01L29/41733
for thin film transistors with insulated gate
H01L29/41741
for vertical or pseudo-vertical devices
H01L29/4175
for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness
H01L29/41758
for lateral devices with structured layout for source or drain region
H01L29/41766
with at least part of the source or drain electrode having contact below the semiconductor surface
H01L29/41775
characterised by the proximity or the relative position of the source or drain electrode and the gate electrode
H01L29/41783
Raised source or drain electrodes self aligned with the gate
H01L29/41791
for transistors with a horizontal current flow in a vertical sidewall
H01L29/423
not carrying the current to be rectified, amplified or switched
H01L29/42304
Base electrodes for bipolar transistors
H01L29/42308
Gate electrodes for thyristors
H01L29/42312
Gate electrodes for field effect devices
H01L29/42316
for field-effect transistors
H01L29/4232
with insulated gate
H01L29/42324
Gate electrodes for transistors with a floating gate
H01L29/42328
with at least one additional gate other than the floating gate and the control gate
H01L29/42332
with the floating gate formed by two or more non connected parts
H01L29/42336
with one gate at least partly formed in a trench
H01L29/4234
Gate electrodes for transistors with charge trapping gate insulator
H01L29/42344
with at least one additional gate
H01L29/42348
with trapping site formed by at least two separated sites
H01L29/42352
with the gate at least partly formed in a trench
H01L29/42356
Disposition
H01L29/4236
within a trench
H01L29/42364
characterised by the insulating layer
H01L29/42368
the thickness being non-uniform
H01L29/42372
characterised by the conducting layer
H01L29/42376
characterised by the length or the sectional shape
H01L29/4238
characterised by the surface lay-out
H01L29/42384
for thin film field effect transistors
H01L29/42392
fully surrounding the channel
H01L29/42396
for charge coupled devices
H01L29/43
characterised by the materials of which they are formed
H01L29/432
Heterojunction gate for field effect devices
H01L29/435
Resistive materials for field effect devices
H01L29/437
Superconductor materials
H01L29/45
Ohmic electrodes
H01L29/452
on AIII-BV compounds
H01L29/454
on thin film AIII-BV compounds
H01L29/456
on silicon
H01L29/458
for thin film silicon
H01L29/47
Schottky barrier electrodes
H01L29/475
on AIII-BV compounds
H01L29/49
Metal-insulator-semiconductor electrodes
H01L29/4908
for thin film semiconductor
H01L29/4916
the conductor material next to the insulator being a silicon layer
H01L29/4925
with a multiple layer structure
H01L29/4933
with a silicide layer contacting the silicon layer
H01L29/4941
with a barrier layer between the silicon and the metal or metal silicide upper layer
H01L29/495
the conductor material next to the insulator being a simple metal
H01L29/4958
with a multiple layer structure
H01L29/4966
the conductor material next to the insulator being a composite material
H01L29/4975
being a silicide layer
H01L29/4983
with a lateral structure
H01L29/4991
comprising an air gap
H01L29/51
Insulating materials associated therewith
H01L29/511
with a compositional variation
H01L29/512
the variation being parallel to the channel plane
H01L29/513
the variation being perpendicular to the channel plane
H01L29/515
with cavities
H01L29/516
with at least one ferroelectric layer
H01L29/517
the insulating material comprising a metallic compound
H01L29/518
the insulating material containing nitrogen
H01L29/66
Types of semiconductor device; Multistep manufacturing processes therefor
H01L29/66007
Multistep manufacturing processes
H01L29/66015
of devices having a semiconductor body comprising semiconducting carbon
H01L29/66022
the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/6603
Diodes
H01L29/66037
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/66045
Field-effect transistors
H01L29/66053
of devices having a semiconductor body comprising crystalline silicon carbide
H01L29/6606
the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/66068
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
H01L29/66083
the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/6609
Diodes
H01L29/66098
Breakdown diodes
H01L29/66106
Zener diodes
H01L29/66113
Avalanche diodes
H01L29/66121
Multilayer diodes
H01L29/66128
Planar diodes
H01L29/66136
PN junction diodes
H01L29/66143
Schottky diodes
H01L29/66151
Tunnel diodes
H01L29/66159
Transit time diodes
H01L29/66166
Resistors with PN junction
H01L29/66174
Capacitors with PN or Schottky junction
H01L29/66181
Conductor-insulator-semiconductor capacitors
H01L29/66189
with PN junction
H01L29/66196
with an active layer made of a group 13/15 material
H01L29/66204
Diodes
H01L29/66212
Schottky diodes
H01L29/66219
with a heterojunction
H01L29/66227
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/66234
Bipolar junction transistors [BJT]
H01L29/66242
Heterojunction transistors [HBT]
H01L29/6625
Lateral transistors
H01L29/66257
Schottky transistors
H01L29/66265
Thin film bipolar transistors
H01L29/66272
Silicon vertical transistors
H01L29/6628
Inverse transistors
H01L29/66287
with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate
H01L29/66295
with main current going through the whole silicon substrate
H01L29/66303
with multi-emitter
H01L29/6631
with an active layer made of a group 13/15 material
H01L29/66318
Heterojunction transistors
H01L29/66325
controlled by field-effect
H01L29/66333
Vertical insulated gate bipolar transistors
H01L29/6634
with a recess formed by etching in the source/emitter contact region
H01L29/66348
with a recessed gate
H01L29/66356
Gated diodes
H01L29/66363
Thyristors
H01L29/66371
structurally associated with another device
H01L29/66378
the other device being a controlling field-effect device
H01L29/66386
Bidirectional thyristors
H01L29/66393
Lateral or planar thyristors
H01L29/66401
with an active layer made of a group 13/15 material
H01L29/66409
Unipolar field-effect transistors
H01L29/66416
Static induction transistors [SIT]
H01L29/66424
Permeable base transistors [PBT]
H01L29/66431
with a heterojunction interface channel or gate
H01L29/66439
with a one- or zero-dimensional channel
H01L29/66446
with an active layer made of a group 13/15 material
H01L29/66454
Static induction transistors [SIT]
H01L29/66462
with a heterojunction interface channel or gate
H01L29/66469
with one- or zero-dimensional channel
H01L29/66477
with an insulated gate
H01L29/66484
with multiple gate, at least one gate being an insulated gate
H01L29/66492
with a pocket or a lightly doped drain selectively formed at the side of the gate
H01L29/665
using self aligned silicidation
H01L29/66507
providing different silicide thicknesses on the gate and on source or drain
H01L29/66515
using self aligned selective metal deposition simultaneously on the gate and on source or drain
H01L29/66522
with an active layer made of a group 13/15 material
H01L29/6653
using the removal of at least part of spacer
H01L29/66537
using a self aligned punch through stopper or threshold implant under the gate region
H01L29/66545
using a dummy
H01L29/66553
using inside spacers, permanent or not
H01L29/6656
using multiple spacer layers
H01L29/66568
Lateral single gate silicon transistors
H01L29/66575
where the source and drain or source and drain extensions are self-aligned to the sides of the gate
H01L29/66583
with initial gate mask or masking layer complementary to the prospective gate location
H01L29/6659
with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate
H01L29/66598
forming drain [D] and lightly doped drain [LDD] simultaneously
H01L29/66606
with final source and drain contacts formation strictly before final or dummy gate formation
H01L29/66613
with a gate recessing step
H01L29/66621
using etching to form a recess at the gate location
H01L29/66628
recessing the gate by forming single crystalline semiconductor material at the source or drain location
H01L29/66636
with source or drain recessed by etching or first recessed by etching and then refilled
H01L29/66643
with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
H01L29/66651
with a single crystalline channel formed on the silicon substrate after insulating device isolation
H01L29/66659
with asymmetry in the channel direction
H01L29/66666
Vertical transistors
H01L29/66674
DMOS transistors
H01L29/66681
Lateral DMOS transistors
H01L29/66689
with a step of forming an insulating sidewall spacer
H01L29/66696
with a step of recessing the source electrode
H01L29/66704
with a step of recessing the gate electrode
H01L29/66712
Vertical DMOS transistors
H01L29/66719
With a step of forming an insulating sidewall spacer
H01L29/66727
with a step of recessing the source electrode
H01L29/66734
with a step of recessing the gate electrode
H01L29/66742
Thin film unipolar transistors
H01L29/6675
Amorphous silicon or polysilicon transistors
H01L29/66757
Lateral single gate single channel transistors with non-inverted structure
H01L29/66765
Lateral single gate single channel transistors with inverted structure
H01L29/66772
Monocristalline silicon transistors on insulating substrates
H01L29/6678
on sapphire substrates
H01L29/66787
with a gate at the side of the channel
H01L29/66795
with a horizontal current flow in a vertical sidewall of a semiconductor body
H01L29/66803
with a step of doping the vertical sidewall
H01L29/6681
using dummy structures having essentially the same shape as the semiconductor body
H01L29/66818
the channel being thinned after patterning
H01L29/66825
with a floating gate
H01L29/66833
with a charge trapping gate insulator
H01L29/6684
with a ferroelectric gate insulator
H01L29/66848
with a Schottky gate
H01L29/66856
with an active layer made of a group 13/15 material
H01L29/66863
Lateral single gate transistors
H01L29/66871
Processes wherein the final gate is made after the formation of the source and drain regions in the active layer
H01L29/66878
Processes wherein the final gate is made before the formation
H01L29/66886
Lateral transistors with two or more independent gates
H01L29/66893
with a PN junction gate
H01L29/66901
with a PN homojunction gate
H01L29/66909
Vertical transistors
H01L29/66916
with a PN heterojunction gate
H01L29/66924
with an active layer made of a group 13/15 material
H01L29/66931
BJT-like unipolar transistors
H01L29/66939
with an active layer made of a group 13/15 material
H01L29/66946
Charge transfer devices
H01L29/66954
with an insulated gate
H01L29/66962
with a Schottky gate
H01L29/66969
of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L29/66977
Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects
H01L29/66984
Devices using spin polarized carriers
H01L29/66992
controllable only by the variation of applied heat
H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/685
Hi-Lo semiconductor devices
H01L29/70
Bipolar devices
H01L29/705
Double base diodes
H01L29/72
Transistor-type devices
H01L29/73
Bipolar junction transistors
H01L29/7302
structurally associated with other devices
H01L29/7304
the device being a resistive element
H01L29/7306
Point contact transistors
H01L29/7308
Schottky transistors
H01L29/7311
Tunnel transistors
H01L29/7313
Avalanche transistors
H01L29/7315
Transistors with hook collector
H01L29/7317
Bipolar thin film transistors
H01L29/732
Vertical transistors
H01L29/7322
having emitter-base and base-collector junctions leaving at the same surface of the body
H01L29/7325
having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body
H01L29/7327
Inverse vertical transistors
H01L29/735
Lateral transistors
H01L29/737
Hetero-junction transistors
H01L29/7371
Vertical transistors
H01L29/7373
having a two-dimensional base
H01L29/7375
having an emitter comprising one or more non-monocrystalline elements of group IV
H01L29/7376
Resonant tunnelling transistors
H01L29/7378
comprising lattice mismatched active layers
H01L29/739
controlled by field-effect
H01L29/7391
Gated diode structures
H01L29/7392
with PN junction gate
H01L29/7393
Insulated gate bipolar mode transistors
H01L29/7394
on an insulating layer or substrate
H01L29/7395
Vertical transistors
H01L29/7396
with a non planar surface
H01L29/7397
and a gate structure lying on a slanted or vertical surface or formed in a groove
H01L29/7398
with both emitter and collector contacts in the same substrate side
H01L29/74
Thyristor-type devices
H01L29/7404
structurally associated with at least one other device
H01L29/7408
the device being a capacitor or a resistor
H01L29/7412
the device being a diode
H01L29/7416
the device being an antiparallel diode
H01L29/742
the device being a field effect transistor
H01L29/7424
having a built-in localised breakdown/breakover region
H01L29/7428
having an amplifying gate structure
H01L29/7432
Asymmetrical thyristors
H01L29/7436
Lateral thyristors
H01L29/744
Gate-turn-off devices
H01L29/745
with turn-off by field effect
H01L29/7455
produced by an insulated gate structure
H01L29/747
Bidirectional devices
H01L29/749
with turn-on by field effect
H01L29/76
Unipolar devices
H01L29/7606
Transistor-like structures
H01L29/7613
Single electron transistors; Coulomb blockade devices
H01L29/762
Charge transfer devices
H01L29/765
Charge-coupled devices
H01L29/768
with field effect produced by an insulated gate
H01L29/76808
Input structures
H01L29/76816
Output structures
H01L29/76825
Structures for regeneration, refreshing, leakage compensation or the like
H01L29/76833
Buried channel CCD
H01L29/76841
Two-Phase CCD
H01L29/7685
Three-Phase CCD
H01L29/76858
Four-Phase CCD
H01L29/76866
Surface Channel CCD
H01L29/76875
Two-Phase CCD
H01L29/76883
Three-Phase CCD
H01L29/76891
Four-Phase CCD
H01L29/772
Field effect transistors
H01L29/7722
using static field induced regions
H01L29/7725
with delta-doped channel
H01L29/7727
Velocity modulation transistors
H01L29/775
with one dimensional charge carrier gas channel
H01L29/778
with two-dimensional charge carrier gas channel
H01L29/7781
with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer
H01L29/7782
with confinement of carriers by at least two heterojunctions
H01L29/7783
using III-V semiconductor material
H01L29/7784
with delta or planar doped donor layer
H01L29/7785
with more than one donor layer
H01L29/7786
with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer
H01L29/7787
with wide bandgap charge-carrier supplying layer
H01L29/7788
Vertical transistors
H01L29/7789
the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
H01L29/78
with field effect produced by an insulated gate
H01L29/7801
DMOS transistors
H01L29/7802
Vertical DMOS transistors
H01L29/7803
structurally associated with at least one other device
H01L29/7804
the other device being a pn-junction diode
H01L29/7805
in antiparallel
H01L29/7806
the other device being a Schottky barrier diode
H01L29/7808
the other device being a breakdown diode
H01L29/7809
having both source and drain contacts on the same surface
H01L29/781
Inverted VDMOS transistors
H01L29/7811
with an edge termination structure
H01L29/7812
with a substrate comprising an insulating layer
H01L29/7813
with trench gate electrode
H01L29/7815
with voltage or current sensing structure
H01L29/7816
Lateral DMOS transistors
H01L29/7817
structurally associated with at least one other device
H01L29/7818
the other device being a pn-junction diode
H01L29/7819
in antiparallel
H01L29/782
the other device being a Schottky barrier diode
H01L29/7821
the other device being a breakdown diode
H01L29/7823
with an edge termination structure
H01L29/7824
with a substrate comprising an insulating layer
H01L29/7825
with trench gate electrode
H01L29/7826
with voltage or current sensing structure
H01L29/7827
Vertical transistors
H01L29/7828
without inversion channel
H01L29/783
comprising a gate to body connection
H01L29/7831
with multiple gate structure
H01L29/7832
the structure comprising a MOS gate and at least one non-MOS gate
H01L29/7833
with lightly doped drain or source extension
H01L29/7834
with a non-planar structure
H01L29/7835
with asymmetrical source and drain regions
H01L29/7836
with a significant overlap between the lightly doped extension and the gate electrode
H01L29/7838
without inversion channel
H01L29/7839
with Schottky drain or source contact
H01L29/78391
the gate comprising a layer which is used for its ferroelectric properties
H01L29/7841
with floating body
H01L29/7842
means for exerting mechanical stress on the crystal lattice of the channel region
H01L29/7843
the means being an applied insulating layer
H01L29/7845
the means being a conductive material
H01L29/7846
the means being located in the lateral device isolation region
H01L29/7847
using a memorization technique
H01L29/7848
the means being located in the source/drain region
H01L29/7849
the means being provided under the channel
H01L29/785
having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body
H01L29/7851
with the body tied to the substrate
H01L29/7853
the body having a non-rectangular crossection
H01L29/7854
with rounded corners
H01L29/7855
with at least two independent gates
H01L29/7856
with an non-uniform gate
H01L29/786
Thin film transistors
H01L29/78603
characterised by the insulating substrate or support
H01L29/78606
with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
H01L29/78609
for preventing leakage current
H01L29/78612
for preventing the kink- or the snapback effect
H01L29/78615
with a body contact
H01L29/78618
characterised by the drain or the source properties
H01L29/78621
with LDD structure or an extension or an offset region or characterised by the doping profile
H01L29/78624
the source and the drain regions being asymmetrical
H01L29/78627
with a significant overlap between the lightly doped drain and the gate electrode
H01L29/78633
with a light shield
H01L29/78636
with supplementary region or layer for improving the flatness of the device
H01L29/78639
with a drain or source connected to a bulk conducting substrate
H01L29/78642
Vertical transistors
H01L29/78645
with multiple gate
H01L29/78648
arranged on opposing sides of the channel
H01L29/78651
Silicon transistors
H01L29/78654
Monocrystalline silicon transistors
H01L29/78657
SOS transistors
H01L29/7866
Non-monocrystalline silicon transistors
H01L29/78663
Amorphous silicon transistors
H01L29/78666
with normal-type structure
H01L29/78669
with inverted-type structure
H01L29/78672
Polycrystalline or microcrystalline silicon transistor
H01L29/78675
with normal-type structure
H01L29/78678
with inverted-type structure
H01L29/78681
having a semiconductor body comprising Alll-BV or All-BVI or AIV-BVI semiconductor materials, or Se or Te
H01L29/78684
having a semiconductor body comprising semiconductor materials of the fourth group not being silicon, or alloys including an element of the group IV
H01L29/78687
with a multilayer structure or superlattice structure
H01L29/7869
having a semiconductor body comprising an oxide semiconductor material
H01L29/78693
the semiconducting oxide being amorphous
H01L29/78696
characterised by the structure of the channel
H01L29/788
with floating gate
H01L29/7881
Programmable transistors with only two possible levels of programmation
H01L29/7882
charging by injection of carriers through a conductive insulator
H01L29/7883
charging by tunnelling of carriers
H01L29/7884
charging by hot carrier injection
H01L29/7885
Hot carrier injection from the channel
H01L29/7886
Hot carrier produced by avalanche breakdown of a PN junction
H01L29/7887
Programmable transistors with more than two possible different levels of programmation
H01L29/7888
Transistors programmable by two single electrons
H01L29/7889
Vertical transistors
H01L29/792
with charge trapping gate insulator
H01L29/7923
Programmable transistors with more than two possible different levels of programmation
H01L29/7926
Vertical transistors
H01L29/80
with field effect produced by a PN or other rectifying junction gate
H01L29/802
with heterojunction gate
H01L29/803
Programmable transistors
H01L29/806
with Schottky drain or source contact
H01L29/808
with a PN junction gate
H01L29/8083
Vertical transistors
H01L29/8086
Thin film JFET's
H01L29/812
with a Schottky gate
H01L29/8122
Vertical transistors
H01L29/8124
with multiple gate
H01L29/8126
Thin film MESFET's
H01L29/8128
with recessed gate
H01L29/82
controllable by variation of the magnetic field applied to the device
H01L29/84
controllable by variation of applied mechanical force
H01L29/86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/8605
Resistors with PN junctions
H01L29/861
Diodes
H01L29/8611
Planar PN junction diodes
H01L29/8613
Mesa PN junction diodes
H01L29/8615
Hi-lo semiconductor devices
H01L29/8616
Charge trapping diodes
H01L29/8618
Diodes with bulk potential barrier
H01L29/862
Point contact diodes
H01L29/864
Transit-time diodes
H01L29/866
Zener diodes
H01L29/868
PIN diodes
H01L29/87
Thyristor diodes
H01L29/872
Schottky diodes
H01L29/8725
of the trench MOS barrier type [TMBS]
H01L29/88
Tunnel-effect diodes
H01L29/882
Resonant tunneling diodes
H01L29/885
Esaki diodes
H01L29/92
Capacitors with potential-jump barrier or surface barrier
H01L29/93
Variable capacitance diodes
H01L29/94
Metal-insulator-semiconductors
H01L29/945
Trench capacitors
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Nanoco 2D Materials Limited
Steven Daniels
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Integrated semiconductor device and method for manufacturing the same
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11,967,521
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INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
Kai Cao
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Power module semiconductor device and inverter equipment, and fabri...
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Rohm Co., Ltd.
Toshio Hanada
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Masashi Hayashiguchi
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Semiconductor package and manufacturing method of the same
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Taiwan Semiconductor Manufacturing Company Ltd.
Ming-Fa Chen
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Semiconductor structure and forming method therefor
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11,967,571
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Fujian Jinhua Integrated Circuit Co., Ltd.
Yi-Wang Jhan
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Array substrate and method of mounting integrated circuit using the...
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Samsung Display Co., Ltd.
Dae Geun Lee
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Light emitting device
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SEOUL VIOSYS CO., LTD.
Chung Hoon Lee
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NANYA TECHNOLOGY CORPORATION
Ting-Cih Kang
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Crystalline oxide semiconductor film and semiconductor device
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11,967,618
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FLOSFIA INC.
Isao Takahashi
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SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
Shuming Xu
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Power semiconductor device and manufacturing method thereof
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JSAB TECHNOLOGIES (SHENZHEN) LTD.
Hao Feng
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Lateral bipolar junction transistors with an airgap spacer
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11,967,636
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Global Foundries U.S. Inc.
Shesh Mani Pandey
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SCR structure for ESD protection in SOI technologies
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11,967,639
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Infineon Technologies AG
Gernot Langguth
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Semiconductor device
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11,967,643
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Sanken Electric Co., Ltd.
Taro Kondo
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Power MOSFETs structure
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11,967,645
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Taiwan Semiconductor Manufacturing Company Ltd.
Yogendra Yadav
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Semiconductor Energy Laboratory Co., Ltd.
Toshihiko Takeuchi
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Method and apparatus for use in improving linearity of MOSFETs usin...
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11,967,948
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pSemi Corporation
Christopher N. Brindle
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Methods used in fabricating integrated circuitry and methods of for...
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Micron Technology, Inc.
Scott E. Sills
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Method of forming memory cells, high voltage devices and logic devi...
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11,968,829
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Silicon Storage Technology, Inc.
Zhuoqiang Jia
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Vertical type semiconductor devices and methods of manufacturing th...
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11,968,835
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Apr 23, 2024
Samsung Electronics Co., Ltd.
Eun-Taek Jung
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Method for manufacturing sputtering target, method for forming oxid...
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11,967,505
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Apr 23, 2024
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
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Structure and method for fabricating a computing system with an int...
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11,967,528
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Apple Inc.
Vidhya Ramachandran
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Semiconductor structure and forming method thereof
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11,967,531
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CHANGXIN MEMORY TECHNOLOGIES, INC.
Xiaoguang Wang
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Semiconductor devices and methods of manufacturing thereof
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11,967,533
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Taiwan Semiconductor Manufacturing Company, Ltd
Shu-Uei Jang
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Semiconductor devices and methods for manufacturing the same
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11,967,554
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Samsung Electronics Co., Ltd.
Jongjin Lee
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3D semiconductor device and structure with metal layers
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11,967,583
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Monolithic 3D Inc.
Zvi Or-Bach
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Systems and methods for multi-color LED pixel unit with horizontal...
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11,967,589
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Apr 23, 2024
Jade Bird Display (Shanghai) Limited
Qunchao Xu
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Dual threshold voltage (VT) channel devices and their methods of fa...
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11,967,615
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Intel Corporation
Hsu-Yu Chang
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Semiconductor devices and electronic systems including the same
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11,967,623
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Apr 23, 2024
Samsung Electronics Co., Ltd.
Sunggil Kim
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20240138136
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Samsung Electronics Co., Ltd.
Jeewoong KIM
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Sekisui Chemical Co., Ltd.
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Yoshiaki SATAKE
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20240136325
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NHK Spring Co., Ltd.
Ryo TANAKA
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MEMORY DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
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20240136327
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Samsung Electronics Co., Ltd.
AENEE JANG
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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20240136328
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Amkor Technology Singapore Holding Pte. Ltd.
Joon Young Park
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF FORMING THE SAME
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20240136348
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PANJIT INTERNATIONAL INC.
YIJYUN KE
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OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION
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20240136357
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QUALCOMM Incorporated
Xia LI
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SiC MOSFET POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
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20240136404
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DB HiTek Co., Ltd.
Hee Bae LEE
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20240136405
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HYUNDAI MOBIS CO., LTD.
Ju Hwan LEE
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SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
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DENSO CORPORATION
Hideyuki UEHIGASHI
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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20240136410
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RENESAS ELECTRONICS CORPORATION
Yu NAGAHAMA
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TRANSISTOR DEVICE AND METHOD OF FABRICATING CONTACTS TO A SEMICONDU...
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Infineon Technologies Austria AG
Seung Hwan Lee
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SEMICONDUCTOR DEVICE
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20240136418
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Taiwan Semiconductor Manufacturing Co., Ltd.
Shih-Cheng Chen
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FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
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20240136435
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ROBERT BOSCH GmbH
Daniel Krebs
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FERROELECTRIC FIELD-EFFECT TRANSISTOR WITH HIGH PERMITTIVITY INTERF...
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20240136437
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The Regents of the University of California
Sayeef Salahuddin
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Mitsubishi Electric Corporation
Yuki TAKIGUCHI
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SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
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20240136441
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Taiwan Semiconductor Manufacturing Company, Ltd.
Ken-Ichi Goto
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Flash Memory Device with Three-Dimensional Half Structure and Metho...
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20240136444
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Taiwan Semiconductor Manufacturing Company Limited
Yu-Chu LIN
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SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVI...
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20240136445
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SK HYNIX INC.
Yang Kyu CHOI
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20240136446
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Commissariat a I'Energie Atomique et aux Energies Alternatives
Florian Dupont
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Barrier-Free Approach for Forming Contact Plugs
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20240136227
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Taiwan Semiconductor Manufacturing Co., Ltd.
Ching-Yi Chen
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CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE
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20240136229
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Applied Materials, Inc.
Jody FRONHEISER
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SJ Semiconductor(Jiangyin) Corporation
Yenheng Chen
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ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS
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20240136253
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International Business Machines Corporation
Nicholas Anthony Lanzillo
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INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
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20240136255
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Samsung Electronics Co., Ltd.
Bongwee YU
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LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
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20240136469
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EPISTAR CORPORATION
Che-Hung LIN
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OXIDE SEMICONDUCTOR FILM AND FILM-FORMING METHOD THE SAME, SEMICOND...
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20240136179
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Apr 25, 2024
Shin-Etsu Chemical Co., Ltd.
Takahiro SAKATSUME
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SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
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Apr 25, 2024
KYOCERA CORPORATION
Katsuaki MASAKI
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OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
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20240133076
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SLT TECHNOLOGIES, INC.
Wenkan JIANG
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