Membership
Tour
Register
Log in
Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
Follow
Industry
CPC
H01L2924/00
This industry / category may be too specific. Please go to a parent level for more data
Parent Industries
H
ELECTRICITY
H01
Electric elements
H01L
SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
Current Industry
H01L2924/00
Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
Sub Industries
H01L2924/0001
Technical content checked by a classifier
H01L2924/00011
Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
H01L2924/00012
Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
H01L2924/00013
Fully indexed content
H01L2924/00014
the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/00015
the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
H01L2924/0002
Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L2924/01
Chemical elements
H01L2924/01001
Hydrogen [H]
H01L2924/01002
Helium [He]
H01L2924/01003
Lithium [Li]
H01L2924/01004
Beryllium [Be]
H01L2924/01005
Boron [B]
H01L2924/01006
Carbon [C]
H01L2924/01007
Nitrogen [N]
H01L2924/01008
Oxygen [O]
H01L2924/01009
Fluorine [F]
H01L2924/0101
Neon [Ne]
H01L2924/01011
Sodium [Na]
H01L2924/01012
Magnesium [Mg]
H01L2924/01013
Aluminum [Al]
H01L2924/01014
Silicon [Si]
H01L2924/01015
Phosphorus [P]
H01L2924/01016
Sulfur [S]
H01L2924/01017
Chlorine [Cl]
H01L2924/01018
Argon [Ar]
H01L2924/01019
Potassium [K]
H01L2924/0102
Calcium [Ca]
H01L2924/01021
Scandium [Sc]
H01L2924/01022
Titanium [Ti]
H01L2924/01023
Vanadium [V]
H01L2924/01024
Chromium [Cr]
H01L2924/01025
Manganese [Mn]
H01L2924/01026
Iron [Fe]
H01L2924/01027
Cobalt [Co]
H01L2924/01028
Nickel [Ni]
H01L2924/01029
Copper [Cu]
H01L2924/0103
Zinc [Zn]
H01L2924/01031
Gallium [Ga]
H01L2924/01032
Germanium [Ge]
H01L2924/01033
Arsenic [As]
H01L2924/01034
Selenium [Se]
H01L2924/01035
Bromine [Br]
H01L2924/01036
Krypton [Kr]
H01L2924/01037
Rubidium [Rb]
H01L2924/01038
Strontium [Sr]
H01L2924/01039
Yttrium [Y]
H01L2924/0104
Zirconium [Zr]
H01L2924/01041
Niobium [Nb]
H01L2924/01042
Molybdenum [Mo]
H01L2924/01043
Technetium [Tc]
H01L2924/01044
Ruthenium [Ru]
H01L2924/01045
Rhodium [Rh]
H01L2924/01046
Palladium [Pd]
H01L2924/01047
Silver [Ag]
H01L2924/01048
Cadmium [Cd]
H01L2924/01049
Indium [In]
H01L2924/0105
Tin [Sn]
H01L2924/01051
Antimony [Sb]
H01L2924/01052
Tellurium [Te]
H01L2924/01053
Iodine [I]
H01L2924/01054
Xenon [Xe]
H01L2924/01055
Cesium [Cs]
H01L2924/01056
Barium [Ba]
H01L2924/01057
Lanthanum [La]
H01L2924/01058
Cerium [Ce]
H01L2924/01059
Praseodymium [Pr]
H01L2924/0106
Neodymium [Nd]
H01L2924/01061
Promethium [Pm]
H01L2924/01062
Samarium [Sm]
H01L2924/01063
Europium [Eu]
H01L2924/01064
Gadolinium [Gd]
H01L2924/01065
Terbium [Tb]
H01L2924/01066
Dysprosium [Dy]
H01L2924/01067
Holmium [Ho]
H01L2924/01068
Erbium [Er]
H01L2924/01069
Thulium [Tm]
H01L2924/0107
Ytterbium [Yb]
H01L2924/01071
Lutetium [Lu]
H01L2924/01072
Hafnium [Hf]
H01L2924/01073
Tantalum [Ta]
H01L2924/01074
Tungsten [W]
H01L2924/01075
Rhenium [Re]
H01L2924/01076
Osmium [Os]
H01L2924/01077
Iridium [Ir]
H01L2924/01078
Platinum [Pt]
H01L2924/01079
Gold [Au]
H01L2924/0108
Mercury [Hg]
H01L2924/01081
Thallium [Tl]
H01L2924/01082
Lead [Pb]
H01L2924/01083
Bismuth [Bi]
H01L2924/01084
Polonium [Po]
H01L2924/01085
Astatine [At]
H01L2924/01086
Radon [Rn]
H01L2924/01087
Francium [Fr]
H01L2924/01088
Radium [Ra]
H01L2924/01089
Actinium [Ac]
H01L2924/0109
Thorium [Th]
H01L2924/01091
Protactinium [Pa]
H01L2924/01092
Uranium [U]
H01L2924/01093
Neptunium [Np]
H01L2924/01094
Plutonium [Pu]
H01L2924/011
Groups of the periodic table
H01L2924/01101
Alkali metals
H01L2924/01102
Alkali earth metals
H01L2924/01103
Transition metals
H01L2924/01104
Refractory metals
H01L2924/01105
Rare earth metals
H01L2924/01106
Lanthanides
H01L2924/01107
Actinides
H01L2924/01108
Noble metals
H01L2924/01109
Metalloids or Semi-metals
H01L2924/0111
Chalcogens
H01L2924/01111
Halogens
H01L2924/01112
Noble gases
H01L2924/012
Semiconductor purity grades
H01L2924/01201
1N purity grades
H01L2924/01202
2N purity grades
H01L2924/01203
3N purity grades
H01L2924/01204
4N purity grades
H01L2924/01205
5N purity grades
H01L2924/01206
6N purity grades
H01L2924/01207
7N purity grades
H01L2924/01208
8N purity grades
H01L2924/013
Alloys
H01L2924/0132
Binary Alloys
H01L2924/01321
Isomorphous Alloys
H01L2924/01322
Eutectic Alloys
H01L2924/01323
Hypoeutectic alloys
H01L2924/01324
Hypereutectic alloys
H01L2924/01325
Peritectic Alloys
H01L2924/01326
Monotectics
H01L2924/01327
Intermediate phases
H01L2924/0133
Ternary Alloys
H01L2924/0134
Quaternary Alloys
H01L2924/0135
Quinary Alloys
H01L2924/014
Solder alloys
H01L2924/01402
Invar
H01L2924/01403
Kovar
H01L2924/01404
Alloy 42
H01L2924/01405
Inovco
H01L2924/042
Borides composed of metals from groups of the periodic table
H01L2924/0421
1st Group
H01L2924/0422
2nd Group
H01L2924/0423
3rd Group
H01L2924/0424
4th Group
H01L2924/0425
5th Group
H01L2924/0426
6th Group
H01L2924/0427
7th Group
H01L2924/0428
8th Group
H01L2924/0429
9th Group
H01L2924/044
10th Group
H01L2924/0441
11th Group
H01L2924/0442
12th Group
H01L2924/0443
13th Group
H01L2924/0444
14th Group
H01L2924/0445
Lanthanides
H01L2924/0446
Actinides
H01L2924/0449
being a combination of two or more materials provided in the groups H01L2924/0421 - H01L2924/0446
H01L2924/04491
having a monocrystalline microstructure
H01L2924/04492
having a polycrystalline microstructure
H01L2924/04494
having an amorphous microstructure
H01L2924/045
Carbides composed of metals from groups of the periodic table
H01L2924/0451
1st Group
H01L2924/0452
2nd Group
H01L2924/0453
3rd Group
H01L2924/0454
4th Group
H01L2924/04541
TiC
H01L2924/0455
5th Group
H01L2924/0456
6th Group
H01L2924/04563
WC
H01L2924/0457
7th Group
H01L2924/0458
8th Group
H01L2924/0459
9th Group
H01L2924/046
10th Group
H01L2924/0461
11th Group
H01L2924/0462
12th Group
H01L2924/0463
13th Group
H01L2924/0464
14th Group
H01L2924/04642
SiC
H01L2924/0465
Lanthanides
H01L2924/0466
Actinides
H01L2924/0469
being a combination of two or more materials provided in the groups H01L2924/0451 - H01L2924/0466
H01L2924/04691
having a monocrystalline microstructure
H01L2924/04692
having a polycrystalline microstructure
H01L2924/04694
having an amorphous microstructure
H01L2924/047
Silicides composed of metals from groups of the periodic table
H01L2924/0471
1st Group
H01L2924/0472
2nd Group
H01L2924/0473
3rd Group
H01L2924/0474
4th Group
H01L2924/0475
5th Group
H01L2924/0476
6th Group
H01L2924/0477
7th Group
H01L2924/0478
8th Group
H01L2924/0479
9th Group
H01L2924/048
10th Group
H01L2924/0481
11th Group
H01L2924/0482
12th Group
H01L2924/0483
13th Group
H01L2924/0484
14th Group
H01L2924/0485
Lanthanides
H01L2924/0486
Actinides
H01L2924/0489
being a combination of two or more materials provided in the groups H01L2924/0471 - H01L2924/0486
H01L2924/04891
having a monocrystalline microstructure
H01L2924/04892
having a polycrystalline microstructure
H01L2924/04894
having an amorphous microstructure
H01L2924/049
Nitrides composed of metals from groups of the periodic table
H01L2924/0491
1st Group
H01L2924/0492
2nd Group
H01L2924/0493
3rd Group
H01L2924/0494
4th Group
H01L2924/04941
TiN
H01L2924/0495
5th Group
H01L2924/04953
TaN
H01L2924/0496
6th Group
H01L2924/0497
7th Group
H01L2924/0498
8th Group
H01L2924/0499
9th Group
H01L2924/05
10th Group
H01L2924/0501
11th Group
H01L2924/0502
12th Group
H01L2924/0503
13th Group
H01L2924/05032
AlN
H01L2924/0504
14th Group
H01L2924/05042
Si3N4
H01L2924/0505
Lanthanides
H01L2924/0506
Actinides
H01L2924/0509
being a combination of two or more materials provided in the groups H01L2924/0491 - H01L2924/0506
H01L2924/05091
having a monocrystalline microstructure
H01L2924/05092
having a polycrystalline microstructure
H01L2924/05094
having an amorphous microstructure
H01L2924/051
Phosphides composed of metals from groups of the periodic table
H01L2924/0511
1st Group
H01L2924/0512
2nd Group
H01L2924/0513
3rd Group
H01L2924/0514
4th Group
H01L2924/0515
5th Group
H01L2924/0516
6th Group
H01L2924/0517
7th Group
H01L2924/0518
8th Group
H01L2924/0519
9th Group
H01L2924/052
10th Group
H01L2924/0521
11th Group
H01L2924/0522
12th Group
H01L2924/0523
13th Group
H01L2924/0524
14th Group
H01L2924/0525
Lanthanides
H01L2924/0526
Actinides
H01L2924/0529
being a combination of two or more materials provided in the groups H01L2924/0511 - H01L2924/0526
H01L2924/05291
having a monocrystalline microstructure
H01L2924/05292
having a polycrystalline microstructure
H01L2924/05294
having an amorphous microstructure
H01L2924/053
Oxides composed of metals from groups of the periodic table
H01L2924/0531
1st Group
H01L2924/0532
2nd Group
H01L2924/0533
3rd Group
H01L2924/0534
4th Group
H01L2924/05341
TiO2
H01L2924/05342
ZrO2
H01L2924/0535
5th Group
H01L2924/0536
6th Group
H01L2924/0537
7th Group
H01L2924/0538
8th Group
H01L2924/05381
FeOx
H01L2924/0539
9th Group
H01L2924/054
10th Group
H01L2924/0541
11th Group
H01L2924/0542
12th Group
H01L2924/0543
13th Group
H01L2924/05432
Al2O3
H01L2924/0544
14th Group
H01L2924/05442
SiO2
H01L2924/0545
Lanthanides
H01L2924/0546
Actinides
H01L2924/0549
being a combination of two or more materials provided in the groups H01L2924/0531 - H01L2924/0546
H01L2924/05491
having a monocrystalline microstructure
H01L2924/05492
having a polycrystalline microstructure
H01L2924/05494
having an amorphous microstructure
H01L2924/055
Chalcogenides other than oxygen i.e.sulfides, selenides and tellurides composed of metals from groups of the periodic table
H01L2924/0551
1st Group
H01L2924/0552
2nd Group
H01L2924/0553
3rd Group
H01L2924/0554
4th Group
H01L2924/0555
5th Group
H01L2924/0556
6th Group
H01L2924/0557
7th Group
H01L2924/0558
8th Group
H01L2924/0559
9th Group
H01L2924/056
10th Group
H01L2924/0561
11th Group
H01L2924/0562
12th Group
H01L2924/0563
13th Group
H01L2924/0564
14th Group
H01L2924/0565
Lanthanides
H01L2924/0566
Actinides
H01L2924/0569
being a combination of two or more materials provided in the groups H01L2924/0551 - H01L2924/0566
H01L2924/05691
having a monocrystalline microstructure
H01L2924/05692
having a polycrystalline microstructure
H01L2924/05694
having an amorphous microstructure
H01L2924/057
Halides composed of metals from groups of the periodic table
H01L2924/0571
1st Group
H01L2924/0572
2nd Group
H01L2924/0573
3rd Group
H01L2924/0574
4th Group
H01L2924/0575
5th Group
H01L2924/0576
6th Group
H01L2924/0577
7th Group
H01L2924/0578
8th Group
H01L2924/0579
9th Group
H01L2924/058
10th Group
H01L2924/0581
11th Group
H01L2924/0582
12th Group
H01L2924/0583
13th Group
H01L2924/0584
14th Group
H01L2924/0585
Lanthanides
H01L2924/0586
Actinides
H01L2924/0589
being a combination of two or more materials provided in the groups H01L2924/0571 - H01L2924/0586
H01L2924/05891
having a monocrystalline microstructure
H01L2924/05892
having a polycrystalline microstructure
H01L2924/05894
having an amorphous microstructure
H01L2924/059
Being combinations of any of the materials from the groups H01L2924/042 - H01L2924/0584
H01L2924/05991
having a monocrystalline microstructure
H01L2924/05992
having a polycrystalline microstructure
H01L2924/05994
having an amorphous microstructure
H01L2924/06
Polymers
H01L2924/061
Polyolefin polymer
H01L2924/0615
Styrenic polymer
H01L2924/062
Halogenated polymer
H01L2924/0625
Polyvinyl alchohol
H01L2924/063
Polyvinyl acetate
H01L2924/0635
Acrylic polymer
H01L2924/064
Graft polymer
H01L2924/0645
Block copolymer
H01L2924/065
ABS
H01L2924/0655
Polyacetal
H01L2924/066
Phenolic resin
H01L2924/0665
Epoxy resin
H01L2924/067
Polyphenylene
H01L2924/0675
Polyester
H01L2924/068
Polycarbonate
H01L2924/0685
Polyether
H01L2924/069
Polyurethane
H01L2924/0695
Polyamide
H01L2924/07
Polyamine or polyimide
H01L2924/07001
Polyamine
H01L2924/07025
Polyimide
H01L2924/0705
Sulfur containing polymer
H01L2924/0715
Polysiloxane
H01L2924/078
Adhesive characteristics other than chemical
H01L2924/07802
not being an ohmic electrical conductor
H01L2924/0781
being an ohmic electrical conductor
H01L2924/07811
Extrinsic
H01L2924/07812
Intrinsic
H01L2924/0782
being pressure sensitive
H01L2924/095
with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
H01L2924/0951
Glass epoxy laminates
H01L2924/09511
FR-4
H01L2924/09512
FR-5
H01L2924/09522
G10
H01L2924/09523
G11
H01L2924/096
Cermets
H01L2924/097
Glass-ceramics
H01L2924/09701
Low temperature co-fired ceramic [LTCC]
H01L2924/10
Details of semiconductor or other solid state devices to be connected
H01L2924/1011
Structure
H01L2924/1015
Shape
H01L2924/10155
being other than a cuboid
H01L2924/10156
at the periphery
H01L2924/10157
at the active surface
H01L2924/10158
at the passive surface
H01L2924/1016
being a cuboid
H01L2924/10161
with a rectangular active surface
H01L2924/10162
with a square active surface
H01L2924/1017
being a sphere
H01L2924/102
Material of the semiconductor or solid state bodies
H01L2924/1025
Semiconducting materials
H01L2924/10251
Elemental semiconductors
H01L2924/10252
Germanium [Ge]
H01L2924/10253
Silicon [Si]
H01L2924/10254
Diamond [C]
H01L2924/1026
Compound semiconductors
H01L2924/1027
IV
H01L2924/10271
Silicon-germanium [SiGe]
H01L2924/10272
Silicon Carbide [SiC]
H01L2924/1032
III-V
H01L2924/10321
Aluminium antimonide [AlSb]
H01L2924/10322
Aluminium arsenide [AlAs]
H01L2924/10323
Aluminium nitride [AlN]
H01L2924/10324
Aluminium phosphide [AlP]
H01L2924/10325
Boron nitride [BN]
H01L2924/10326
Boron phosphide [BP]
H01L2924/10327
Boron arsenide [BAs, B12As2]
H01L2924/10328
Gallium antimonide [GaSb]
H01L2924/10329
Gallium arsenide [GaAs]
H01L2924/1033
Gallium nitride [GaN]
H01L2924/10331
Gallium phosphide [GaP]
H01L2924/10332
Indium antimonide [InSb]
H01L2924/10333
Indium arsenide [InAs]
H01L2924/10334
Indium nitride [InN]
H01L2924/10335
Indium phosphide [InP]
H01L2924/10336
Aluminium gallium arsenide [AlGaAs]
H01L2924/10337
Indium gallium arsenide [InGaAs]
H01L2924/10338
Indium gallium phosphide [InGaP]
H01L2924/10339
Aluminium indium arsenide [AlInAs]
H01L2924/1034
Aluminium indium antimonide [AlInSb]
H01L2924/10341
Gallium arsenide nitride [GaAsN]
H01L2924/10342
Gallium arsenide phosphide [GaAsP]
H01L2924/10343
Gallium arsenide antimonide [GaAsSb]
H01L2924/10344
Aluminium gallium nitride [AlGaN]
H01L2924/10345
Aluminium gallium phosphide [AlGaP]
H01L2924/10346
Indium gallium nitride [InGaN]
H01L2924/10347
Indium arsenide antimonide [InAsSb]
H01L2924/10348
Indium gallium antimonide [InGaSb]
H01L2924/10349
Aluminium gallium indium phosphide [AlGaInP]
H01L2924/1035
Aluminium gallium arsenide phosphide [AlGaInP]
H01L2924/10351
Indium gallium arsenide phosphide [InGaAsP]
H01L2924/10352
Indium gallium arsenide antimonide [InGaAsSb]
H01L2924/10353
Indium arsenide antimonide phosphide [InAsSbP]
H01L2924/10354
Aluminium indium arsenide phosphide [AlInAsP]
H01L2924/10355
Aluminium gallium arsenide nitride [AlGaAsN]
H01L2924/10356
Indium gallium arsenide nitride [InGaAsN]
H01L2924/10357
Indium aluminium arsenide nitride [InAlAsN]
H01L2924/10358
Gallium arsenide antimonide nitride [GaAsSbN]
H01L2924/10359
Gallium indium nitride arsenide antimonide [GaInNAsSb]
H01L2924/1036
Gallium indium arsenide antimonide phosphide [GaInAsSbP]
H01L2924/1037
II-VI
H01L2924/10371
Cadmium selenide [CdSe]
H01L2924/10372
Cadmium sulfide [CdS]
H01L2924/10373
Cadmium telluride [CdTe]
H01L2924/10375
Zinc selenide [ZnSe]
H01L2924/10376
Zinc sulfide [ZnS]
H01L2924/10377
Zinc telluride [ZnTe]
H01L2924/10378
Cadmium zinc telluride
H01L2924/10379
Mercury cadmium telluride [HgZnTe]
H01L2924/1038
Mercury zinc telluride [HgZnSe]
H01L2924/10381
Mercury zinc selenide [HgZnSe]
H01L2924/1042
I-VII
H01L2924/10421
Cuprous chloride [CuCl]
H01L2924/1047
I-VI
H01L2924/10471
Copper sulfide [CuS]
H01L2924/1052
IV-VI
H01L2924/10521
Lead selenide [PbSe]
H01L2924/10522
Lead(II)sulfide [PbS]
H01L2924/10523
Lead telluride [PbTe]
H01L2924/10524
Tin sulfide [SnS, SnS2]
H01L2924/10525
Tin telluride [SnTe]
H01L2924/10526
Lead tin telluride [PbSnTe]
H01L2924/10527
Thallium tin telluride [Tl2SnTe5]
H01L2924/10528
Thallium germanium telluride [Tl2GeTe5]
H01L2924/1057
V-VI
H01L2924/10571
Bismuth telluride [Bi2Te3]
H01L2924/1062
II-V
H01L2924/10621
Cadmium phosphide [Cd3P2]
H01L2924/10622
Cadmium arsenide [Cd3As2]
H01L2924/10623
Cadmium antimonide [Cd3Sb2]
H01L2924/10624
Zinc phosphide [Zn3P2]
H01L2924/10625
Zinc arsenide [Zn3As2]
H01L2924/10626
Zinc antimonide [Zn3Sb2]
H01L2924/1067
Oxide
H01L2924/10671
Titanium dioxide, anatase, rutile, brookite [TiO2]
H01L2924/10672
Copper(I)oxide [Cu2O]
H01L2924/10673
Copper(II)oxide [CuO]
H01L2924/10674
Uranium dioxide [UO2]
H01L2924/10675
Uranium trioxide [UO3]
H01L2924/10676
Bismuth trioxide [Bi2O3]
H01L2924/10677
Tin dioxide [SnO2]
H01L2924/10678
Barium titanate [BaTiO3]
H01L2924/10679
Strontium titanate [SrTiO3]
H01L2924/1068
Lithium niobate [LiNbO3]
H01L2924/10681
Lanthanum copper oxide [La2CuO4]
H01L2924/1072
Layered
H01L2924/10721
Lead(II)iodide [PbI2]
H01L2924/10722
Molybdenum disulfide [MoS2]
H01L2924/10723
Gallium selenide [GaSe]
H01L2924/10724
Tin sulfide [SnS]
H01L2924/10725
Bismuth sulfide [Bi2S3]
H01L2924/1077
Magnetic diluted [DMS]
H01L2924/10771
Gallium manganese arsenide [GaMnAs]
H01L2924/10772
Indium manganese arsenide [InMnAs]
H01L2924/10773
Cadmium manganese telluride [CdMnTe]
H01L2924/10774
Lead manganese telluride [PbMnTe]
H01L2924/10775
Lanthanum calcium manganate [La0.7Ca0.3MnO3]
H01L2924/10776
Iron(II)oxide [FeO]
H01L2924/10777
Nickel(II)oxide [NiO]
H01L2924/10778
Europium(II)oxide [EuO]
H01L2924/10779
Europium(II)sulfide [EuS]
H01L2924/1078
Chromium(III)bromide [CrBr3]
H01L2924/1082
Other
H01L2924/10821
Copper indium gallium selenide, CIGS [Cu[In,Ga]Se2]
H01L2924/10822
Copper zinc tin sulfide, CZTS [Cu2ZnSnS4]
H01L2924/10823
Copper indium selenide, CIS [CuInSe2]
H01L2924/10824
Silver gallium sulfide [AgGaS2]
H01L2924/10825
Zinc silicon phosphide [ZnSiP2]
H01L2924/10826
Arsenic selenide [As2S3]
H01L2924/10827
Platinum silicide [PtSi]
H01L2924/10828
Bismuth(III)iodide [BiI3]
H01L2924/10829
Mercury(II)iodide [HgI2]
H01L2924/1083
Thallium(I)bromide [TlBr]
H01L2924/10831
Selenium [Se]
H01L2924/10832
Silver sulfide [Ag2S]
H01L2924/10833
Iron disulfide [FeS2]
H01L2924/11
Device type
H01L2924/12
Passive devices
H01L2924/1203
Rectifying Diode
H01L2924/12031
PIN diode
H01L2924/12032
Schottky diode
H01L2924/12033
Gunn diode
H01L2924/12034
Varactor
H01L2924/12035
Zener diode
H01L2924/12036
PN diode
H01L2924/12037
Cat's whisker diode
H01L2924/12038
Point contact
H01L2924/1204
Optical Diode
H01L2924/12041
LED
H01L2924/12042
LASER
H01L2924/12043
Photo diode
H01L2924/12044
OLED
H01L2924/1205
Capacitor
H01L2924/1206
Inductor
H01L2924/1207
Resistor
H01L2924/13
Discrete devices
H01L2924/1301
Thyristor
H01L2924/13011
Anode Gate Thyristor [AGT]
H01L2924/13013
Bidirectional Control Thyristor [BCT]
H01L2924/13014
Breakover Diode [BOD]
H01L2924/13015
DIAC - Bidirectional trigger device
H01L2924/13016
Dynistor - Unidirectional switching device
H01L2924/13017
Shockley diode - Unidirectional trigger and switching device
H01L2924/13018
SIDAC - Bidirectional switching device
H01L2924/13019
Trisil, SIDACtor - Bidirectional protection devices
H01L2924/1302
GTO - Gate Turn-Off thyristor
H01L2924/13021
DB-GTO - Distributed Buffer Gate Turn-Off thyristor
H01L2924/13022
MA-GTO - Modified Anode Gate Turn-Off thyristor
H01L2924/13023
IGCT - Integrated Gate Commutated Thyristor
H01L2924/13024
LASCR - Light Activated SCR, or LTT - Light triggered thyristor
H01L2924/13025
Light Activated Semiconducting Switch [LASS]
H01L2924/13026
MCT - MOSFET Controlled Thyristor - It contains two additional FET structures for on/off control
H01L2924/13027
BRT - Base Resistance Controlled Thyristor
H01L2924/13028
RCT - Reverse Conducting Thyristor
H01L2924/13029
PUT or PUJT - Programmable Unijunction Transistor - A thyristor with gate on n-type layer near to the anode used as a functional replacement for unijunction transistor
H01L2924/1303
SCS - Silicon Controlled Switch or Thyristor Tetrode - A thyristor with both cathode and anode gates
H01L2924/13032
SITh - Static Induction Thyristor, or FCTh - Field Controlled Thyristor - containing a gate structure that can shut down anode current flow
H01L2924/13033
TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
H01L2924/13034
Silicon Controlled Rectifier [SCR]
H01L2924/13035
Asymmetrical SCR [ASCR]
H01L2924/1304
Transistor
H01L2924/1305
Bipolar Junction Transistor [BJT]
H01L2924/13051
Heterojunction bipolar transistor [HBT]
H01L2924/13052
Schottky transistor
H01L2924/13053
Avalanche transistor
H01L2924/13054
Darlington transistor
H01L2924/13055
Insulated gate bipolar transistor [IGBT]
H01L2924/13056
Photo transistor
H01L2924/1306
Field-effect transistor [FET]
H01L2924/13061
Carbon nanotube field-effect transistor [CNFET]
H01L2924/13062
Junction field-effect transistor [JFET]
H01L2924/13063
Metal-Semiconductor Field-Effect Transistor [MESFET]
H01L2924/13064
High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
H01L2924/13066
Inverted-T field effect transistor [ITFET]
H01L2924/13067
FinFET, source/drain region shapes fins on the silicon surface
H01L2924/13068
Fast-reverse epitaxial diode field-effect transistor [FREDFET]
H01L2924/13069
Thin film transistor [TFT]
H01L2924/1307
Organic Field-Effect Transistor [OFET]
H01L2924/13071
Ballistic transistor
H01L2924/13072
Sensor FET
H01L2924/13073
ion-sensitive field-effect transistor [ISFET]
H01L2924/13074
Electrolyte-oxide-semiconductor field effect transistor [EOSFET]
H01L2924/13075
Deoxyribonucleic acid field-effect transistor [DNAFET]
H01L2924/13076
DEPFET
H01L2924/13078
Unijunction transistors
H01L2924/13079
Single-electron transistors [SET]
H01L2924/1308
Nanofluidic transistor
H01L2924/13081
Multigate devices
H01L2924/13082
Tetrode transistor
H01L2924/13083
Pentode transistor
H01L2924/13084
Trigate transistor
H01L2924/13085
Dual gate FETs
H01L2924/13086
Junctionless Nanowire Transistor [JNT]
H01L2924/13087
Vertical-Slit Field-Effect Transistor [VeSFET]
H01L2924/13088
Graphene Nanoribbon Field-Effect Transistor [GNRFET]
H01L2924/13089
Nanoparticle Organic Memory Field-Effect Transistor [NOMFET]
H01L2924/1309
Modulation-Doped Field Effect Transistor [MODFET]
H01L2924/13091
Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
H01L2924/13092
Dual Gate Metal-Oxide-Semiconductor Field-Effect Transistor [DGMOSFET]
H01L2924/14
Integrated circuits
H01L2924/141
Analog devices
H01L2924/142
HF devices
H01L2924/1421
RF devices
H01L2924/14211
Voltage-controlled oscillator [VCO]
H01L2924/14215
Low-noise amplifier [LNA]
H01L2924/1422
Mixer
H01L2924/14221
Electronic mixer
H01L2924/14222
Frequency mixer
H01L2924/1423
Monolithic Microwave Integrated Circuit [MMIC]
H01L2924/1424
Operational amplifier
H01L2924/1425
Converter
H01L2924/14251
Frequency converter
H01L2924/14252
Voltage converter
H01L2924/14253
Digital-to-analog converter [DAC]
H01L2924/1426
Driver
H01L2924/1427
Voltage regulator [VR]
H01L2924/143
Digital devices
H01L2924/1431
Logic devices
H01L2924/1432
Central processing unit [CPU]
H01L2924/1433
Application-specific integrated circuit [ASIC]
H01L2924/14335
Digital signal processor [DSP]
H01L2924/1434
Memory
H01L2924/1435
Random access memory [RAM]
H01L2924/1436
Dynamic random-access memory [DRAM]
H01L2924/14361
Synchronous dynamic random access memory [SDRAM]
H01L2924/14362
RAS Only Refresh [ROR]
H01L2924/14363
CAS before RAS refresh [CBR]
H01L2924/14364
Multibank DRAM [MDRAM]
H01L2924/14365
Video DRAM [VRAM]
H01L2924/14366
Window DRAM [WRAM]
H01L2924/14367
Fast page mode DRAM [FPM DRAM]
H01L2924/14368
Extended data out DRAM [EDO DRAM]
H01L2924/14369
Burst EDO DRAM [BEDO DRAM]
H01L2924/1437
Static random-access memory [SRAM]
H01L2924/1438
Flash memory
H01L2924/1441
Ferroelectric RAM [FeRAM or FRAM]
H01L2924/1442
Synchronous graphics RAM [SGRAM]
H01L2924/1443
Non-volatile random-access memory [NVRAM]
H01L2924/1444
PBRAM
H01L2924/145
Read-only memory [ROM]
H01L2924/1451
EPROM
H01L2924/14511
EEPROM
H01L2924/1453
PROM
H01L2924/146
Mixed devices
H01L2924/1461
MEMS
H01L2924/15
Details of package parts other than the semiconductor or other solid state devices to be connected
H01L2924/151
Die mounting substrate
H01L2924/1511
Structure
H01L2924/1515
Shape
H01L2924/15151
the die mounting substrate comprising an aperture
H01L2924/15153
the die mounting substrate comprising a recess for hosting the device
H01L2924/15155
the shape of the recess being other than a cuboid
H01L2924/15156
Side view
H01L2924/15157
Top view
H01L2924/15158
the die mounting substrate being other than a cuboid
H01L2924/15159
Side view
H01L2924/15162
Top view
H01L2924/15165
Monolayer substrate
H01L2924/1517
Multilayer substrate
H01L2924/15172
Fan-out arrangement of the internal vias
H01L2924/15173
in a single layer of the multilayer substrate
H01L2924/15174
in different layers of the multilayer substrate
H01L2924/15182
Fan-in arrangement of the internal vias
H01L2924/15183
in a single layer of the multilayer substrate
H01L2924/15184
in different layers of the multilayer substrate
H01L2924/15192
Resurf arrangement of the internal vias
H01L2924/152
Disposition
H01L2924/153
Connection portion
H01L2924/1531
the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
H01L2924/15311
being a ball array
H01L2924/15312
being a pin array
H01L2924/15313
being a land array
H01L2924/1532
the connection portion being formed on the die mounting surface of the substrate
H01L2924/15321
being a ball array
H01L2924/15322
being a pin array
H01L2924/15323
being a land array
H01L2924/1533
the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
H01L2924/15331
being a ball array
H01L2924/15332
being a pin array
H01L2924/15333
being a land array
H01L2924/156
Material
H01L2924/157
with a principal constituent of the material being a metal or a metalloid
H01L2924/15701
the principal constituent melting at a temperature of less than 400 C
H01L2924/15717
the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
H01L2924/15724
Aluminium [Al] as principal constituent
H01L2924/15738
the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
H01L2924/15747
Copper [Cu] as principal constituent
H01L2924/1576
Iron [Fe] as principal constituent
H01L2924/15763
the principal constituent melting at a temperature of greater than 1550 C
H01L2924/15786
with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L2924/15787
Ceramics
H01L2924/15788
Glasses
H01L2924/1579
with a principal constituent of the material being a polymer
H01L2924/15791
The principal constituent being an elastomer
H01L2924/15793
with a principal constituent of the material being a solid not provided for in groups H01L2924/157 - H01L2924/15791
H01L2924/15798
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material
H01L2924/161
Cap
H01L2924/1611
Structure
H01L2924/1615
Shape
H01L2924/16151
Cap comprising an aperture
H01L2924/16152
Cap comprising a cavity for hosting the device
H01L2924/16153
Cap enclosing a plurality of side-by-side cavities [
H01L2924/1616
Cavity shape
H01L2924/1617
Cavity coating
H01L2924/16171
Material
H01L2924/16172
with a principal constituent of the material being a metal or a metalloid
H01L2924/16173
with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L2924/16174
Ceramics
H01L2924/16175
Glasses
H01L2924/16176
with a principal constituent of the material being a polymer
H01L2924/16177
The principal constituent being an elastomer
H01L2924/16178
with a principal constituent of the material being a solid not provided for in groups H01L2924/157 - H01L2924/15791
H01L2924/16179
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material
H01L2924/1619
Cavity coating shape
H01L2924/16195
Flat cap [not enclosing an internal cavity]
H01L2924/16196
Cap forming a cavity
H01L2924/162
Disposition
H01L2924/16235
Connecting to a semiconductor or solid-state bodies
H01L2924/16251
Connecting to an item not being a semiconductor or solid-state body
H01L2924/1626
Cap-in-cap assemblies
H01L2924/1627
stacked type assemblies
H01L2924/163
Connection portion
H01L2924/1631
Structure
H01L2924/16315
Shape
H01L2924/1632
Disposition
H01L2924/164
Material
H01L2924/165
with a principal constituent of the material being a metal or a metalloid
H01L2924/16586
with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L2924/16587
Ceramics
H01L2924/16588
Glasses
H01L2924/1659
with a principal constituent of the material being a polymer
H01L2924/16593
with a principal constituent of the material being a solid not provided for in groups H01L2924/157 - H01L2924/15791
H01L2924/16598
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material
H01L2924/166
Material
H01L2924/167
with a principal constituent of the material being a metal or a metalloid
H01L2924/16701
the principal constituent melting at a temperature of less than 400 C
H01L2924/16717
the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
H01L2924/16724
Aluminium [Al] as principal constituent
H01L2924/16738
the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
H01L2924/16747
Copper [Cu] as principal constituent
H01L2924/1676
Iron [Fe] as principal constituent
H01L2924/16763
the principal constituent melting at a temperature of greater than 1550 C
H01L2924/16786
with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L2924/16787
Ceramics
H01L2924/16788
Glasses
H01L2924/1679
with a principal constituent of the material being a polymer
H01L2924/16791
The principal constituent being an elastomer
H01L2924/16793
with a principal constituent of the material being a solid not provided for in groups H01L2924/167 - H01L2924/16791
H01L2924/16798
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material
H01L2924/171
Frame
H01L2924/1711
Structure
H01L2924/1715
Shape
H01L2924/17151
Frame comprising an aperture
H01L2924/172
Disposition
H01L2924/173
Connection portion
H01L2924/176
Material
H01L2924/177
with a principal constituent of the material being a metal or a metalloid
H01L2924/17701
the principal constituent melting at a temperature of less than 400 C
H01L2924/17717
the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
H01L2924/17724
Aluminium [Al] as principal constituent
H01L2924/17738
the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
H01L2924/17747
Copper [Cu] as principal constituent
H01L2924/1776
Iron [Fe] as principal constituent
H01L2924/17763
the principal constituent melting at a temperature of greater than 1550 C
H01L2924/17786
with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L2924/17787
Ceramics
H01L2924/17788
Glasses
H01L2924/1779
with a principal constituent of the material being a polymer
H01L2924/17791
The principal constituent being an elastomer
H01L2924/17793
with a principal constituent of the material being a solid not provided for in groups H01L2924/177 - H01L2924/17791
H01L2924/17798
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material
H01L2924/181
Encapsulation
H01L2924/1811
Structure
H01L2924/1815
Shape
H01L2924/1816
Exposing the passive side of the semiconductor or solid-state body
H01L2924/18161
of a flip chip
H01L2924/18162
of a chip with build-up interconnect
H01L2924/18165
of a wire bonded chip
H01L2924/182
Disposition
H01L2924/183
Connection portion
H01L2924/18301
being an anchoring portion
H01L2924/186
Material
H01L2924/19
Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
H01L2924/1901
Structure
H01L2924/19011
including integrated passive components
H01L2924/19015
including thin film passive components
H01L2924/1902
including thick film passive components
H01L2924/1903
including wave guides
H01L2924/19031
being a strip line type
H01L2924/19032
being a microstrip line type
H01L2924/19033
being a coplanar line type
H01L2924/19038
being a hybrid line type
H01L2924/19039
impedance transition between different types of wave guides
H01L2924/1904
Component type
H01L2924/19041
being a capacitor
H01L2924/19042
being an inductor
H01L2924/19043
being a resistor
H01L2924/1905
Shape
H01L2924/19051
Impedance matching structure [
H01L2924/191
Disposition
H01L2924/19101
of discrete passive components
H01L2924/19102
in a stacked assembly with the semiconductor or solid state device
H01L2924/19103
interposed between the semiconductor or sold-state device and the die mounting substrate [
H01L2924/19104
on the semiconductor or sold-state device [
H01L2924/19105
in a side-by-side arrangement on a common die mounting substrate
H01L2924/19106
in a mirrored arrangement on two different side of a common die mounting substrate
H01L2924/19107
off-chip wires
H01L2924/20
Parameters
H01L2924/201
Temperature ranges
H01L2924/20101
Temperature range T<0 C, T<273.15 K
H01L2924/20102
Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
H01L2924/20103
Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
H01L2924/20104
Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
H01L2924/20105
Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
H01L2924/20106
Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
H01L2924/20107
Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
H01L2924/20108
Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
H01L2924/20109
Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
H01L2924/2011
Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K
H01L2924/20111
Temperature range 450 C=<T<500 C, 723.15K =<T< 773.15K
H01L2924/202
Electromagnetic wavelength ranges [W]
H01L2924/20201
Gamma radiation
H01L2924/20202
X-ray radiation
H01L2924/2021
Ultraviolet radiation
H01L2924/20211
UV-C 100=<W<280 nm
H01L2924/20212
UV-B 280=<W<315 nm
H01L2924/20213
UV-A 315=<W<400 nm
H01L2924/2024
Visible spectrum wavelength 390=<W<700 nm
H01L2924/2026
Infrared radiation 700=<W<3000 nm
H01L2924/20261
IR-A 700=<W<1400 nm
H01L2924/20262
IR-B 1400=<W<3000 nm
H01L2924/20263
IR-C 3000 nm =<W<1 mm
H01L2924/2027
Radio 1 mm - km 300 GHz - 3 Hz
H01L2924/20271
Microwave radiation 1 mm - 1 meter, i..e 300 GHz - 300 MHz
H01L2924/203
Ultrasonic frequency ranges
H01L2924/20301
Ultrasonic frequency [f] f<25 kHz
H01L2924/20302
Ultrasonic frequency [f] 25 Khz=<f< 50 KHz
H01L2924/20303
Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
H01L2924/20304
Ultrasonic frequency [f] 75 Khz=<f< 100 KHz
H01L2924/20305
Ultrasonic frequency [f] 100 Khz=<f< 125 KHz
H01L2924/20306
Ultrasonic frequency [f] 125 Khz=<f< 150 KHz
H01L2924/20307
Ultrasonic frequency [f] 150 Khz=<f< 175 KHz
H01L2924/20308
Ultrasonic frequency [f] 175 Khz=<f< 200 KHz
H01L2924/20309
Ultrasonic frequency [f] f>=200 KHz
H01L2924/206
Length ranges
H01L2924/2064
larger or equal to 1 micron less than 100 microns
H01L2924/20641
larger or equal to 100 microns less than 200 microns
H01L2924/20642
larger or equal to 200 microns less than 300 microns
H01L2924/20643
larger or equal to 300 microns less than 400 microns
H01L2924/20644
larger or equal to 400 microns less than 500 microns
H01L2924/20645
larger or equal to 500 microns less than 600 microns
H01L2924/20646
larger or equal to 600 microns less than 700 microns
H01L2924/20647
larger or equal to 700 microns less than 800 microns
H01L2924/20648
larger or equal to 800 microns less than 900 microns
H01L2924/20649
larger or equal to 900 microns less than 1000 microns
H01L2924/2065
larger or equal to 1000 microns less than 1500 microns
H01L2924/20651
larger or equal to 1500 microns less than 2000 microns
H01L2924/20652
larger or equal to 2000 microns less than 2500 microns
H01L2924/20653
larger or equal to 2500 microns less than 3000 microns
H01L2924/20654
larger or equal to 3000 microns less than 4000 microns
H01L2924/20655
larger or equal to 4000 microns less than 5000 microns
H01L2924/20656
larger or equal to 5000 microns less than 6000 microns
H01L2924/20657
larger or equal to 6000 microns less than 7000 microns
H01L2924/20658
larger or equal to 7000 microns less than 8000 microns
H01L2924/207
Diameter ranges
H01L2924/2075
larger or equal to 1 micron less than 10 microns
H01L2924/20751
larger or equal to 10 microns less than 20 microns
H01L2924/20752
larger or equal to 20 microns less than 30 microns
H01L2924/20753
larger or equal to 30 microns less than 40 microns
H01L2924/20754
larger or equal to 40 microns less than 50 microns
H01L2924/20755
larger or equal to 50 microns less than 60 microns
H01L2924/20756
larger or equal to 60 microns less than 70 microns
H01L2924/20757
larger or equal to 70 microns less than 80 microns
H01L2924/20758
larger or equal to 80 microns less than 90 microns
H01L2924/20759
larger or equal to 90 microns less than 100 microns
H01L2924/2076
equal to or larger than 100 microns
H01L2924/30
Technical effects
H01L2924/301
Electrical effects
H01L2924/30101
Resistance
H01L2924/30105
Capacitance
H01L2924/30107
Inductance
H01L2924/3011
Impedance
H01L2924/30111
matching
H01L2924/302
Electrostatic
H01L2924/30201
Charge
H01L2924/30205
Discharge
H01L2924/3025
Electromagnetic shielding
H01L2924/35
Mechanical effects
H01L2924/351
Thermal stress
H01L2924/3511
Warping
H01L2924/3512
Cracking
H01L2924/35121
Peeling or delaminating
H01L2924/36
Material effects
H01L2924/364
Polymers
H01L2924/3641
Outgassing
H01L2924/365
Metallurgical effects
H01L2924/3651
Formation of intermetallics
H01L2924/36511
Purple plague
H01L2924/3656
Formation of Kirkendall voids
H01L2924/37
Effects of the manufacturing process
H01L2924/37001
Yield
H01L2924/37002
Shelf life
H01L2924/3701
increased through put
H01L2924/38
Effects and problems related to the device integration
H01L2924/381
Pitch distance
H01L2924/384
Bump effects
H01L2924/3841
Solder bridging
H01L2924/386
Wire effects
H01L2924/3861
Sag
H01L2924/3862
Sweep
H01L2924/40
Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
H01L2924/401
LASER
H01L2924/40101
Mode
H01L2924/40102
being pulsed
H01L2924/40103
being continous
H01L2924/40105
Beam details
H01L2924/4015
Shape
H01L2924/402
Type
H01L2924/40201
being a chemical
H01L2924/40202
Deuterium Flouride [DF] LASER
H01L2924/40203
Hydrogen Flouride [HF] LASER
H01L2924/40207
Dye laser
H01L2924/4025
being a gas
H01L2924/40251
argon-ion LASER
H01L2924/40252
CO2 LASER
H01L2924/40253
HeAg LASER
H01L2924/40254
HeNe LASER
H01L2924/40255
NeCu LASER
H01L2924/403
being an Excimer
H01L2924/40301
ArF LASER
H01L2924/40302
F2 LASER
H01L2924/40303
KrCl LASER
H01L2924/40304
KrF LASER
H01L2924/40305
XeCl LASER
H01L2924/40306
XeF LASER
H01L2924/4035
being a fiber hosted LASER
H01L2924/404
being a solid state
H01L2924/40401
Free electron LASER
H01L2924/40402
Photonic crystal LASER
H01L2924/40403
Fiber solid state LASER
H01L2924/40404
Yttrium Aluminium Garnet Nd:YAG LASER
H01L2924/40405
Yttrium Lithium Flouride Nd:YLF LASER
H01L2924/40406
Ruby LASER
H01L2924/40407
Yb:YAG LASER
H01L2924/405
Wavelength
H01L2924/40501
UV spectrum
H01L2924/40502
Visible spectrum
H01L2924/40503
IR spectrum
Industries
Overview
Organizations
People
Information
Impact
Patents Grants
last 30 patents
Information
Patent Grant
Compound semiconductor substrate including nitride semiconductor la...
Patent number
12,230,679
Issue date
Feb 18, 2025
Air Water Inc.
Sumito Ouchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Header for an electric component
Patent number
12,230,937
Issue date
Feb 18, 2025
Schott AG
Ong Wai Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Interposers for microelectronic devices
Patent number
12,230,583
Issue date
Feb 18, 2025
Micron Technology, Inc.
Owen Fay
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electronic package and manufacturing method thereof
Patent number
12,230,590
Issue date
Feb 18, 2025
Siliconware Precision Industries Co., Ltd.
Chih-Hsien Chiu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Multi-typed integrated passive device (IPD) components and devices...
Patent number
12,230,614
Issue date
Feb 18, 2025
MACOM Technology Solutions Holdings, Inc.
Marvin Marbell
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electronic device package and fabricating method thereof
Patent number
12,230,661
Issue date
Feb 18, 2025
Amkor Technology Singapore Holding Pte Ltd.
Jin Young Kim
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Method to enable 30 microns pitch EMIB or below
Patent number
12,230,563
Issue date
Feb 18, 2025
Intel Corporation
Hongxia Feng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fluidic assembly encapsulating light emitting diodes
Patent number
12,230,743
Issue date
Feb 18, 2025
ehux, Inc.
Kenji Sasaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Multi-device graded embedding package substrate and manufacturing m...
Patent number
12,230,581
Issue date
Feb 18, 2025
Zhuhai ACCESS Semiconductor Co., Ltd
Xianming Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Embedded die on interposer packages
Patent number
12,230,582
Issue date
Feb 18, 2025
Intel Corporation
John S. Guzek
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Integrated tunable filter architecture
Patent number
12,230,592
Issue date
Feb 18, 2025
pSemi Corporation
William R. Smith
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Solid state transducers with state detection, and associated system...
Patent number
12,230,616
Issue date
Feb 18, 2025
Micron Technology, Inc.
Martin F. Schubert
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method of forming micro interconnect struc...
Patent number
12,230,559
Issue date
Feb 18, 2025
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Francis J. Carney
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Package structure with warpage-control element
Patent number
12,230,597
Issue date
Feb 18, 2025
Taiwan Semiconductor Manufacturing Company, Ltd
Hao-Jan Pei
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure for delivering power
Patent number
12,232,246
Issue date
Feb 18, 2025
RAMBUS INC.
Kyung Suk Oh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Wafer chip scale packaging with ball attach before repassivation
Patent number
12,230,539
Issue date
Feb 18, 2025
Texas Instruments Incorporated
Daiki Komatsu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Packaged stackable electronic power device for surface mounting and...
Patent number
12,230,555
Issue date
Feb 18, 2025
STMicroelectronics S.r.l.
Cristiano Gianluca Stella
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Package device
Patent number
12,230,558
Issue date
Feb 18, 2025
Innolux Corporation
Hsueh-Hsuan Chou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Printed package and method of making the same
Patent number
12,230,594
Issue date
Feb 18, 2025
Texas Instruments Incorporated
Sreenivasan K. Koduri
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Optical sensor, and method for manufacturing optical sensor
Patent number
12,230,618
Issue date
Feb 18, 2025
Rohm Co., Ltd.
Yuya Hasegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturing semiconductor device and semiconductor device
Patent number
12,230,623
Issue date
Feb 18, 2025
Kioxia Corporation
Masaki Sekine
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a high electron mobility transistor
Patent number
12,230,690
Issue date
Feb 18, 2025
Taiwan Semiconductor Manufacturing Company, Ltd
Chun-Wei Hsu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Nonvolatile memory device for increasing reliability of data detect...
Patent number
12,230,330
Issue date
Feb 18, 2025
Samsung Electronics Co., Ltd.
Myeongwoo Lee
G11 - INFORMATION STORAGE
Information
Patent Grant
Memory device
Patent number
12,230,331
Issue date
Feb 18, 2025
Kioxia Corporation
Hiroshi Maejima
G11 - INFORMATION STORAGE
Information
Patent Grant
Semiconductor package having side wall plating
Patent number
12,224,232
Issue date
Feb 11, 2025
SILICONIX INCORPORATED
Barry Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fan-out package having a main die and a dummy die
Patent number
12,224,247
Issue date
Feb 11, 2025
Taiwan Semiconductor Manufacturing Company, Ltd
Yan-Fu Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Memory devices having cell over periphery structure, memory package...
Patent number
12,224,277
Issue date
Feb 11, 2025
Samsung Electronics Co., Ltd.
Yonghyuk Choi
G11 - INFORMATION STORAGE
Information
Patent Grant
Stacked semiconductor device assembly in computer system
Patent number
12,222,880
Issue date
Feb 11, 2025
RAMBUS INC.
Scott C. Best
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Magnetic core inductors in interposer
Patent number
12,224,252
Issue date
Feb 11, 2025
Intel Corporation
Krishna Bharath
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electronic package including lead frame having multiple conductive...
Patent number
12,224,255
Issue date
Feb 11, 2025
Siliconware Precision Industries Co., Ltd.
Chih-Hsien Chiu
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
INTEGRATED CIRCUIT HAVING NON-INTEGRAL MULTIPLE PITCH
Publication number
20250061260
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing Company, Ltd.
Shang-Chih HSIEH
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Application
OPTICAL MODULE PACKAGING STRUCTURE AND METHOD OF MANUFACTURING THE...
Publication number
20250062592
Publication date
Feb 20, 2025
PRIMAX ELECTRONICS LTD.
CHING-HUI CHANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method and Stiffeners for Package Level Warpage Modulation
Publication number
20250062168
Publication date
Feb 20, 2025
Intel Corporation
Justin WHETTEN
B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information
Patent Application
PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Publication number
20250062174
Publication date
Feb 20, 2025
Advanced Semiconductor Engineering, Inc.
Hsu-Nan FANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SUBSTRATE AND METHOD OF PRODUCING A SUBSTRATE
Publication number
20250062175
Publication date
Feb 20, 2025
INFINEON TECHNOLOGIES AG
Charles Rimbert-Riviere
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE
Publication number
20250062177
Publication date
Feb 20, 2025
Samsung Electronics Co., Ltd.
Han Min LEE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF MANUFACTURING FAN-OUT PACKAGING DEVICE AND FAN-OUT PACKAG...
Publication number
20250062216
Publication date
Feb 20, 2025
SILICON BOX PTE. LTD.
Sehat SUTARDJA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE INCLUDING A PLURALITY OF SEMICONDUCTOR CHIPS
Publication number
20250062241
Publication date
Feb 20, 2025
Samsung Electronics Co., Ltd.
Kyungdon MUN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE AND WIRING SUBSTRATE INCLUDED IN THE SAME
Publication number
20250062244
Publication date
Feb 20, 2025
Samsung Electronics Co., Ltd.
KANG JOON LEE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURE FOR DELAMINATION MITIGATION IN A SEMICONDUCTOR DEVICE
Publication number
20250062246
Publication date
Feb 20, 2025
QUALCOMM Incorporated
Joan Rey Villarba BUOT
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20250062250
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing company Ltd.
KUAN-YU HUANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD FOR THE SAME
Publication number
20250062260
Publication date
Feb 20, 2025
SAMSUNG ELECTRONICS CO., LTD,
CHOONGBIN YIM
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME
Publication number
20250062138
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing Company, Ltd.
Tzu-Hsuan CHANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR MODULE
Publication number
20250062272
Publication date
Feb 20, 2025
Fuji Electric Co., Ltd.
Tsubasa WATAKABE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Package with Vertical Electronic Components Held Together by a Clip
Publication number
20250062273
Publication date
Feb 20, 2025
Infineon Technologies Austria AG
Chee Yang Ng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20250062282
Publication date
Feb 20, 2025
DENSO CORPORATION
SHINGO TSUCHIMOCHI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LIGHT EMITTING DIODE AND DISPLAY APPARATUS HAVING THE SAME
Publication number
20250062295
Publication date
Feb 20, 2025
Seoul Viosys Co., Ltd.
Seong Kyu JANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
Publication number
20250062304
Publication date
Feb 20, 2025
Samsung Electronics Co., Ltd.
SEOKGEUN AHN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BONDING APPARATUS AND METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT...
Publication number
20250062274
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing Co., Ltd.
Jen-Hao Liu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE
Publication number
20250062283
Publication date
Feb 20, 2025
SK HYNIX INC.
Seong Ju LEE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGES INCLUDING DAM STRUCTURES
Publication number
20250062167
Publication date
Feb 20, 2025
Samsung Electronics Co., Ltd.
Hansae Lim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor Package With Thermal Conductive Structure and the Met...
Publication number
20250062181
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing Co., Ltd.
Chao-Wei Chiu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF
Publication number
20250062185
Publication date
Feb 20, 2025
Siliconware Precision Industries Co., Ltd.
Yi-Ling CHEN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PACKAGE STRUCTURE, SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING TH...
Publication number
20250062202
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing Company, Ltd.
Chun-Yi Sung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SIGNAL CHANNEL, MODULE SUBSTRATE, AND SEMICONDUCTOR SYSTEM INCLUDIN...
Publication number
20250062239
Publication date
Feb 20, 2025
UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY
HYUN JUN PARK
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
Publication number
20250063745
Publication date
Feb 20, 2025
JCET GROUP CO., LTD.
Jianghua Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20250062199
Publication date
Feb 20, 2025
ROHM CO., LTD.
Hiroaki MATSUBARA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SURFACE TREATMENT IN INTEGRATED CIRCUIT PACKAGE AND METHOD
Publication number
20250062201
Publication date
Feb 20, 2025
Taiwan Semiconductor Manufacturing Co., Ltd.
Chen-Shien Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
Publication number
20250062214
Publication date
Feb 20, 2025
Samsung Electronics Co., Ltd.
Junghoo Yun
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR ASSEMBLING EIC TO PIC TO BUILD AN OPTICAL ENGINE
Publication number
20250062258
Publication date
Feb 20, 2025
Avago Technologies International Sales Pte. Limited
Sukeshwar Kannan
H01 - BASIC ELECTRIC ELEMENTS